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STI11NM80
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STI11NM80

Product Overview

Category

STI11NM80 belongs to the category of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor).

Use

It is commonly used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

STI11NM80 is typically available in a TO-220 package, which provides efficient heat dissipation.

Essence

The essence of STI11NM80 lies in its ability to efficiently control and switch high currents with minimal power loss.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 11A
  • On-Resistance (RDS(on)): 0.65Ω
  • Power Dissipation (PD): 40W
  • Gate-Source Voltage (VGS): ±30V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

STI11NM80 features a standard pin configuration for TO-220 packages: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and improves efficiency.

Advantages

  • Suitable for high voltage applications
  • Fast switching speed
  • Low power dissipation

Disadvantages

  • May require additional circuitry for driving the gate due to high gate-source voltage.

Working Principles

STI11NM80 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

STI11NM80 finds extensive use in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to STI11NM80 include: - STP11NM80 - IRF840 - FQP11N80

In conclusion, STI11NM80 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power applications.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de STI11NM80 em soluções técnicas

  1. What is STI11NM80?

    • STI11NM80 is a high voltage N-channel Power MOSFET designed for applications such as switch mode power supplies, motor control, and other general purpose inverter applications.

  2. What is the maximum drain-source voltage of STI11NM80?

    • The maximum drain-source voltage of STI11NM80 is 800V.

  3. What is the maximum continuous drain current of STI11NM80?

    • The maximum continuous drain current of STI11NM80 is 11A.

  4. What are the typical applications of STI11NM80?

    • Typical applications of STI11NM80 include power supplies, motor drives, lighting systems, and industrial equipment.

  5. What is the on-state resistance of STI11NM80?

    • The on-state resistance of STI11NM80 is typically around 0.65 ohms.

  6. What is the gate threshold voltage of STI11NM80?

    • The gate threshold voltage of STI11NM80 is typically around 3V.

  7. Is STI11NM80 suitable for high frequency switching applications?

    • Yes, STI11NM80 is suitable for high frequency switching applications due to its fast switching characteristics.

  8. Does STI11NM80 have built-in protection features?

    • STI11NM80 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  9. What is the operating temperature range of STI11NM80?

    • The operating temperature range of STI11NM80 is typically -55°C to 150°C.

  10. Is STI11NM80 RoHS compliant?

    • Yes, STI11NM80 is RoHS compliant, making it suitable for use in environmentally sensitive applications.