Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, 80V, 75A, 6mΩ@10V
Descrição
VBsemi (Wei Bi)
Fabricantes
JUNSHINE (Junshine Technology)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 3 VGS(th)(v) 0.85 RDS(ON)(m?)@4.21V 60 Qg(nC)@4.5V 5.4 QgS(nC) 0.44 Qgd(nC) 1 Ciss(pF) 320 Coss(pF) 35 Crss(pF) 22
Descrição
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descrição
AGM-Semi (core control source)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
Welding machine UPB power supply motor drive inverter VCE=1200V Ic=50A Ptot=314W 34mm replace Infineon infineon FF75R12RT4 Silan ST Magnachip 75N120 75A 1200V IGBT Modules
Descrição
XINLUDA (Xinluda)
Fabricantes
High Voltage, High Current Darlington Transistor Array
Descrição
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD17553Q5A N-Channel NexFET Power MOSFET, CSD17553Q5A
Descrição