SI9936BDY-T1-GE3

Introduction

The SI9936BDY-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and performance capabilities.

Basic Information Overview

• Category: Power MOSFET
• Use: The SI9936BDY-T1-GE3 is used as a switching component in power supply, motor control, and other high-power applications.
• Characteristics: This MOSFET offers low on-resistance, high current capability, and fast switching speed, making it suitable for high-efficiency power conversion.
• Package: The SI9936BDY-T1-GE3 is available in a small outline package (SOP-8).
• Essence: Its essence lies in providing efficient power management and control in various electronic systems.
• Packaging/Quantity: The SI9936BDY-T1-GE3 is typically supplied in reels with a quantity of 2500 units per reel.

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 80A
• On-Resistance: 4.5mΩ
• Gate Threshold Voltage: 1.5V
• Maximum Power Dissipation: 2.5W
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI9936BDY-T1-GE3 features a standard SOP-8 pin configuration: 1. GATE: Gate terminal 2. DRAIN: Drain terminal 3. SOURCE: Source terminal 4. N/C: Not connected 5. SOURCE: Source terminal 6. DRAIN: Drain terminal 7. N/C: Not connected 8. GATE: Gate terminal

Functional Features

• Low On-Resistance: Enables minimal power loss and high efficiency in power switching applications.
• High Current Capability: Suitable for handling high-power loads and motor control applications.
• Fast Switching Speed: Facilitates rapid switching transitions, contributing to improved system performance.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion
• Robust current-handling capability
• Fast response time

Disadvantages

• Sensitivity to voltage spikes
• Limited voltage rating compared to some alternatives

Working Principles

The SI9936BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the semiconductor material. When a sufficient gate voltage is applied, the device allows the flow of current between the drain and source terminals, effectively acting as a switch in electronic circuits.

Detailed Application Field Plans

The SI9936BDY-T1-GE3 finds extensive use in the following application fields: - Power supply units - Motor control systems - DC-DC converters - Inverters

Detailed and Complete Alternative Models

Some alternative models to the SI9936BDY-T1-GE3 include: - IRF3205 - FDP8878 - AUIRF3710

In conclusion, the SI9936BDY-T1-GE3 power MOSFET offers high-performance characteristics and is well-suited for a wide range of power management and control applications, making it a valuable component in modern electronic systems.

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