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SI4967DY-T1-GE3
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SI4967DY-T1-GE3

Product Overview

Category

The SI4967DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4967DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is designed to provide efficient power management solutions with minimal power loss and high reliability.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 120A
  • RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4967DY-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. N/C 8. Gate

Functional Features

  • Low on-resistance for minimal power loss
  • High current handling capability for power management applications
  • Fast switching speed for efficient operation
  • Robust construction for reliability in various operating conditions

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Low power dissipation
  • High reliability
  • Compact package size

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The SI4967DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4967DY-T1-GE3 include: - SI2301DS-T1-GE3 - SI2337DS-T1-GE3 - SI4562DY-T1-GE3 - SI7850DP-T1-GE3

In conclusion, the SI4967DY-T1-GE3 power MOSFET offers efficient power management capabilities with its low on-resistance, high current handling, and fast switching speed. Its compact package and reliability make it suitable for various applications in power electronics and voltage regulation.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de SI4967DY-T1-GE3 em soluções técnicas

  1. What is the SI4967DY-T1-GE3 used for?

    • The SI4967DY-T1-GE3 is a dual N-channel MOSFET used for power management and switching applications in various technical solutions.

  2. What are the key features of the SI4967DY-T1-GE3?

    • The SI4967DY-T1-GE3 features low on-resistance, high current capability, and a compact package, making it suitable for efficient power handling.

  3. What voltage and current ratings does the SI4967DY-T1-GE3 support?

    • The SI4967DY-T1-GE3 typically supports voltage ratings up to 30V and current ratings up to several amps, depending on the specific application and configuration.

  4. In what types of technical solutions is the SI4967DY-T1-GE3 commonly used?

    • The SI4967DY-T1-GE3 is commonly used in DC-DC converters, motor control circuits, battery management systems, and other power management applications.

  5. What are the thermal considerations for using the SI4967DY-T1-GE3?

    • Proper heat sinking and thermal management are important when using the SI4967DY-T1-GE3 to ensure optimal performance and reliability, especially at higher power levels.

  6. Does the SI4967DY-T1-GE3 require any external components for operation?

    • Depending on the specific application, the SI4967DY-T1-GE3 may require external components such as gate drivers, resistors, and capacitors for proper operation and protection.

  7. What are the typical operating conditions for the SI4967DY-T1-GE3?

    • The SI4967DY-T1-GE3 operates within a specified temperature range and requires appropriate voltage and current levels for reliable performance in technical solutions.

  8. Are there any recommended layout or PCB design considerations for using the SI4967DY-T1-GE3?

    • Proper PCB layout, including minimizing trace lengths and optimizing component placement, can help reduce parasitic effects and improve the overall performance of the SI4967DY-T1-GE3.

  9. What are the potential failure modes of the SI4967DY-T1-GE3 and how can they be mitigated?

    • Potential failure modes include overcurrent, overvoltage, and thermal stress. These can be mitigated through proper circuit protection, derating guidelines, and thermal management techniques.

  10. Where can I find detailed application notes and technical documentation for the SI4967DY-T1-GE3?

    • Detailed application notes, datasheets, and technical documentation for the SI4967DY-T1-GE3 can typically be found on the manufacturer's website or through authorized distributors.