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SI4840BDY-T1-E3
Product Overview
Category
The SI4840BDY-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High power handling capability
- Low on-resistance
- Fast switching speed
- Low gate drive requirements
Package
The SI4840BDY-T1-E3 is typically available in a small outline package (SOP) with a specified footprint for surface mount assembly.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, typically 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 11A
- On-Resistance (RDS(on)): 9.5mΩ
- Power Dissipation (PD): 2.5W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI4840BDY-T1-E3 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- Low on-resistance for minimal power loss
- High current handling capability
- Fast switching speed for efficient power control
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-resistance for reduced power dissipation
- Suitable for high-frequency switching applications
Disadvantages
- Sensitive to static electricity and voltage spikes
- Requires careful handling during assembly and operation
Working Principles
The SI4840BDY-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the SI4840BDY-T1-E3 include: - SI4841BDY-T1-E3 - SI4842BDY-T1-E3 - SI4843BDY-T1-E3
In summary, the SI4840BDY-T1-E3 is a versatile power MOSFET with high power handling capabilities, fast switching speed, and low on-resistance, making it suitable for various power management applications.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de SI4840BDY-T1-E3 em soluções técnicas
What is the SI4840BDY-T1-E3?
- The SI4840BDY-T1-E3 is a P-channel MOSFET designed for use in various technical solutions, such as power management and battery protection.
What is the maximum drain-source voltage of the SI4840BDY-T1-E3?
- The maximum drain-source voltage of the SI4840BDY-T1-E3 is 40V.
What is the typical on-resistance of the SI4840BDY-T1-E3?
- The typical on-resistance of the SI4840BDY-T1-E3 is 45mΩ.
What are the typical applications of the SI4840BDY-T1-E3?
- The SI4840BDY-T1-E3 is commonly used in applications such as load switching, power management, and battery protection in various electronic devices.
What is the maximum continuous drain current of the SI4840BDY-T1-E3?
- The maximum continuous drain current of the SI4840BDY-T1-E3 is 17A.
What is the package type of the SI4840BDY-T1-E3?
- The SI4840BDY-T1-E3 comes in a D-PAK (TO-252) package.
What is the gate-source voltage range for the SI4840BDY-T1-E3?
- The gate-source voltage range for the SI4840BDY-T1-E3 is ±20V.
Does the SI4840BDY-T1-E3 have built-in ESD protection?
- Yes, the SI4840BDY-T1-E3 features built-in ESD protection, enhancing its reliability in various applications.
What is the operating temperature range of the SI4840BDY-T1-E3?
- The SI4840BDY-T1-E3 has an operating temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
Is the SI4840BDY-T1-E3 RoHS compliant?
- Yes, the SI4840BDY-T1-E3 is RoHS compliant, meeting environmental standards for lead-free manufacturing.