LM5114BMFX/NOPB

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High voltage, high-side and low-side gate driver for N-channel MOSFETs
• Package: 8-pin VSSOP package
• Essence: Efficiently drives both high-side and low-side MOSFETs in a half-bridge configuration
• Packaging/Quantity: Available in tape and reel packaging, with 2500 units per reel

Specifications

• Input Voltage Range: 4.5V to 100V
• Output Voltage Range: -0.3V to 100V
• Supply Voltage Range: 4.5V to 100V
• Operating Temperature Range: -40°C to +125°C
• Switching Frequency: Up to 2MHz
• Output Current: ±4A peak, ±2A continuous
• Propagation Delay: 35ns (typical)

Pin Configuration

The LM5114BMFX/NOPB features the following pin configuration:

1. VDD: Supply voltage input
2. HO: High-side gate drive output
3. LO: Low-side gate drive output
4. LIN: Logic input for low-side MOSFET
5. HIN: Logic input for high-side MOSFET
6. GND: Ground reference
7. NC: No connection
8. VBAT: Bootstrap supply voltage input

Functional Features

• Provides independent high-side and low-side gate drive outputs
• Supports a wide input voltage range for versatile applications
• Offers fast switching speed and low propagation delay
• Includes integrated bootstrap diode for high-side gate drive
• Features under-voltage lockout protection
• Provides thermal shutdown protection

Advantages and Disadvantages

Advantages: - Efficiently drives both high-side and low-side MOSFETs - Wide input voltage range allows for flexible use - Fast switching speed enables high-frequency operation - Integrated bootstrap diode simplifies circuit design - Provides protection features for reliable operation

Disadvantages: - Limited output current may not be suitable for high-power applications - Requires careful consideration of thermal management due to high operating temperature range

Working Principles

The LM5114BMFX/NOPB is designed to drive both high-side and low-side N-channel MOSFETs in a half-bridge configuration. It utilizes independent gate drive outputs for precise control of the MOSFETs. The integrated bootstrap diode simplifies the circuit design by generating the high-side gate drive voltage from the low-side supply.

The device operates over a wide input voltage range, allowing it to be used in various power management applications. It offers fast switching speed and low propagation delay, enabling high-frequency operation. The LM5114BMFX/NOPB also includes protection features such as under-voltage lockout and thermal shutdown to ensure safe and reliable operation.

Detailed Application Field Plans

The LM5114BMFX/NOPB is commonly used in the following application fields:

1. Switching Power Supplies: The device's high voltage capability and efficient gate drive make it suitable for use in switch-mode power supplies.
2. Motor Control: The LM5114BMFX/NOPB can be utilized in motor control circuits to drive MOSFETs for precise control of motor speed and direction.
3. LED Lighting: Its fast switching speed and low propagation delay make it ideal for driving high-power LEDs in lighting applications.
4. Renewable Energy Systems: The device can be employed in solar inverters and wind turbine systems for efficient power conversion.

Detailed and Complete Alternative Models

• LM5114BMFX: Similar to LM5114BMFX/NOPB, but without the "NOPB" suffix. It may have different packaging options.
• LM5109: A related device with similar functionality but designed for lower voltage applications (up to 75V).
• LM5113: Another alternative with a higher output current capability (±6A peak, ±3A continuous) for more demanding applications.

(Note: The above alternative models are provided as examples and may not represent an exhaustive list of alternatives.)

This encyclopedia entry provides an overview of the LM5114BMFX/NOPB, including its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.