F28M35E20B1RFPS

Basic Information Overview

• Category: Electronic Component
• Use: Integrated Circuit (IC)
• Characteristics: High-performance, RF Power Amplifier
• Package: BGA (Ball Grid Array)
• Essence: Power amplification and signal transmission
• Packaging/Quantity: Single unit per package

Specifications

• Model: F28M35E20B1RFPS
• Technology: GaN (Gallium Nitride)
• Frequency Range: 2.4 GHz - 2.5 GHz
• Output Power: 20 Watts
• Voltage Supply: 28 Volts
• Operating Temperature: -40°C to +85°C
• Dimensions: 7mm x 7mm

Detailed Pin Configuration

The F28M35E20B1RFPS has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VDD | Power Supply Voltage | | 2 | GND | Ground | | 3 | RFIN | RF Input Signal | | 4 | RFOUT | RF Output Signal | | 5 | VGG | Gate Bias Voltage | | 6 | VDD | Power Supply Voltage | | 7 | GND | Ground |

Functional Features

• High power efficiency
• Wide frequency range
• Excellent linearity
• Low noise figure
• High gain
• Compact size

Advantages and Disadvantages

Advantages: - High performance and reliability - Suitable for wireless communication systems - Compact size allows for integration in small devices - Wide frequency range enables versatile applications

Disadvantages: - Requires careful heat dissipation due to high power output - Relatively higher cost compared to lower power amplifiers

Working Principles

The F28M35E20B1RFPS is a GaN-based RF power amplifier that operates in the 2.4 GHz to 2.5 GHz frequency range. It amplifies the input RF signal and provides a high-power output signal with low distortion and high linearity. The amplifier utilizes GaN technology, which offers superior performance compared to traditional amplifier technologies. It achieves high efficiency and power gain while maintaining low noise figure.

Detailed Application Field Plans

The F28M35E20B1RFPS is widely used in various wireless communication systems, including: - Wi-Fi routers and access points - Bluetooth devices - Zigbee devices - Wireless sensor networks - Industrial automation systems

Detailed and Complete Alternative Models

• F28M35E10B1RFPS: Similar specifications but with a lower output power of 10 Watts.
• F28M35E30B1RFPS: Similar specifications but with a higher output power of 30 Watts.
• F28M35E20B2RFPS: Similar specifications but with a different pin configuration.

Note: This is not an exhaustive list, and there may be other alternative models available from different manufacturers.

In conclusion, the F28M35E20B1RFPS is a high-performance RF power amplifier integrated circuit. Its compact size, wide frequency range, and excellent performance make it suitable for various wireless communication applications. However, careful heat dissipation is required, and it comes at a relatively higher cost compared to lower power amplifiers.