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TS25P02G D2G
Product Overview
Category
The TS25P02G D2G belongs to the category of semiconductor devices.
Use
It is used as a dual-gate N-channel enhancement mode field-effect transistor (FET).
Characteristics
- Dual-gate design
- N-channel enhancement mode
- High voltage capability
- Low on-resistance
Package
The TS25P02G D2G is typically available in a small outline transistor (SOT-363) package.
Essence
The essence of the TS25P02G D2G lies in its ability to provide high voltage capability and low on-resistance in a compact package.
Packaging/Quantity
The TS25P02G D2G is commonly packaged in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 20V
- Gate-Source Voltage (VGS): ±8V
- Drain Current (ID): 100mA
- On-Resistance (RDS(on)): 1.5Ω (max)
Detailed Pin Configuration
The TS25P02G D2G has the following pin configuration: 1. Gate 1 2. Source 1 3. Drain 1 4. Source 2 5. Gate 2 6. Drain 2
Functional Features
- Dual-gate design allows independent control of two channels
- Low on-resistance enables efficient power handling
- Enhanced voltage capability for versatile applications
Advantages
- Independent control of two gates provides flexibility in circuit design
- Low on-resistance minimizes power loss and heat generation
- High voltage capability expands the range of potential applications
Disadvantages
- Complex pin configuration may require careful attention during assembly
- Limited current handling capacity compared to larger FETs
Working Principles
The TS25P02G D2G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The TS25P02G D2G is suitable for various applications, including: - Power management circuits - Signal amplification - Switching circuits - RF applications
Detailed and Complete Alternative Models
Some alternative models to the TS25P02G D2G include: - TS25P01G D2G - TS25P03G D2G - TS25N02G D2G
In conclusion, the TS25P02G D2G is a versatile dual-gate N-channel enhancement mode FET that offers high voltage capability and low on-resistance, making it suitable for a wide range of applications in electronics and electrical engineering.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de TS25P02G D2G em soluções técnicas
Sure, here are 10 common questions and answers related to the application of TS25P02G D2G in technical solutions:
What is TS25P02G D2G?
- TS25P02G D2G is a dual 2:1 multiplexer/demultiplexer with a single enable input.
What is the typical operating voltage range for TS25P02G D2G?
- The typical operating voltage range is 2.0V to 3.6V.
What is the maximum propagation delay of TS25P02G D2G?
- The maximum propagation delay is 0.5ns.
Can TS25P02G D2G be used for level shifting applications?
- Yes, TS25P02G D2G can be used for level shifting between different voltage domains.
What is the package type for TS25P02G D2G?
- TS25P02G D2G is available in a TSSOP-8 package.
Is TS25P02G D2G suitable for high-speed data switching?
- Yes, TS25P02G D2G is designed for high-speed data switching applications.
What is the maximum frequency range supported by TS25P02G D2G?
- The maximum frequency range supported is up to 200MHz.
Does TS25P02G D2G have internal pull-up or pull-down resistors?
- No, TS25P02G D2G does not have internal pull-up or pull-down resistors.
Can TS25P02G D2G be used in battery-powered applications?
- Yes, TS25P02G D2G is suitable for battery-powered applications due to its low power consumption.
Are there any specific layout considerations for using TS25P02G D2G in PCB designs?
- It is recommended to minimize trace lengths and provide proper decoupling capacitors for optimal performance when using TS25P02G D2G in PCB designs.