LH28F320S3HNS-L11

Product Overview

Category

The LH28F320S3HNS-L11 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The LH28F320S3HNS-L11 offers a large storage capacity of 320 megabits (40 megabytes), allowing users to store a significant amount of data.
• Fast data transfer rate: With its high-speed interface, this flash memory device enables quick data transfer between the device and the host system.
• Reliable performance: The LH28F320S3HNS-L11 is designed to provide reliable and consistent performance, ensuring the integrity and security of stored data.
• Low power consumption: This flash memory device is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: The LH28F320S3HNS-L11 is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The LH28F320S3HNS-L11 is typically packaged in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs). It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Memory Size: 320 Megabits (40 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The LH28F320S3HNS-L11 features a parallel interface with a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. NC (No Connection)
48. GND

Functional Features

• Erase and Program Operations: The LH28F320S3HNS-L11 supports both erase and program operations, allowing users to modify the stored data as needed.
• Block Locking: This flash memory device offers block locking functionality, which enables users to protect specific blocks of data from being modified or erased.
• Read and Write Speed: With its high-speed interface, the LH28F320S3HNS-L11 provides fast read and write speeds, ensuring efficient data access and transfer.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and security.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces.
• Higher cost compared to lower-capacity flash memory options.

Working Principles

The LH28F320S3HNS-L11 utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors, which can be electrically programmed or erased. When data is written, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. To erase data, a higher voltage is applied, removing the trapped electrons. This process enables the LH28F320S3HNS-L11 to retain stored data even when power is disconnected.

Detailed Application Field Plans

The LH28F320S3HNS-L11 finds applications in various electronic devices that require non-volatile storage capabilities. Some potential application fields include:

1. Smartphones