BR24G128FV-3GTE2

Product Overview

Category

BR24G128FV-3GTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile: The BR24G128FV-3GTE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 128 kilobits (16 kilobytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• High-speed operation: It provides fast read and write access times.
• Robust design: The BR24G128FV-3GTE2 is designed to withstand harsh environmental conditions.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic systems.

Package and Quantity

The BR24G128FV-3GTE2 is typically packaged in a surface-mount SOP-8 package. It is available in reels containing a specified quantity of devices.

Specifications

• Memory capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 100 years
• Write endurance: 1 million cycles

Pin Configuration

The BR24G128FV-3GTE2 has an 8-pin configuration as follows:

┌───┬───┐ │ 1 │ 8 │ │ 2 │ 7 │ │ 3 │ 6 │ │ 4 │ 5 │ └───┴───┘

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Random access: The BR24G128FV-3GTE2 allows for random read and write operations.
• Hardware write protection: It provides a write protect pin (WP) to prevent accidental data modification.
• Page write mode: This feature enables simultaneous programming of multiple bytes, improving efficiency.
• Software write protection: The device supports software-based write protection using specific commands.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast operation speeds enhance overall system performance.
• Robust design withstands harsh environmental conditions.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per kilobit compared to larger capacity memories.

Working Principles

The BR24G128FV-3GTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges in a floating gate transistor structure. When a voltage is applied, the trapped charges can be sensed, allowing for data retrieval. The device uses an I2C interface for communication with the host system.

Detailed Application Field Plans

The BR24G128FV-3GTE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Smart meters - Internet of Things (IoT) devices

Alternative Models

• BR24G128FV-3GTE1: Similar to BR24G128FV-3GTE2 with minor variations.
• BR24G64FV-3GTE2: Lower capacity variant with 64 kilobits (8 kilobytes) of memory.

These alternative models offer different storage capacities and may have slight variations in specifications, but they serve similar purposes as the BR24G128FV-3GTE2.

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