Belongs to: Integrated Circuits
Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High voltage, high current, low saturation voltage
Package: TO-220AB
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, 50 units per pack
Advantages: - High current gain - Low noise - High power dissipation capability
Disadvantages: - Limited frequency response - Susceptible to thermal runaway
The UNR5114G0L operates as a bipolar junction transistor, utilizing the movement of charge carriers within a semiconductor to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals.
The UNR5114G0L is commonly used in audio amplifiers, power supply circuits, and motor control applications due to its high current and voltage capabilities. It is also utilized in electronic switches and pulse modulation circuits.
This completes the entry for UNR5114G0L, providing comprehensive information on its product details, specifications, features, and application fields.
What is UNR5114G0L?
What are the key features of UNR5114G0L?
In what technical solutions can UNR5114G0L be used?
What is the maximum voltage and current rating for UNR5114G0L?
What are the recommended operating conditions for UNR5114G0L?
Does UNR5114G0L require any external components for proper operation?
Are there any application notes or reference designs available for using UNR5114G0L?
What are the typical performance characteristics of UNR5114G0L?
Is UNR5114G0L suitable for automotive applications?
Where can I purchase UNR5114G0L and is there a lead time for delivery?