Veja as especificações para detalhes do produto.
NVF3055L108T1G
Product Overview
- Category: Power MOSFET
- Use: Switching and amplification in power electronics applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: N-channel enhancement mode power field-effect transistor
- Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 12A
- On-Resistance (RDS(on)): 0.035Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 18nC
- Threshold Voltage (VGS(th)): 1V to 2V
Detailed Pin Configuration
- Pin 1 (Gate): Input for controlling the MOSFET
- Pin 2 (Drain): Output terminal for the load
- Pin 3 (Source): Common reference for the input and output
Functional Features
- Fast switching speed for efficient power conversion
- Low on-resistance minimizes power loss
- High voltage capability for versatile applications
Advantages and Disadvantages
Advantages
- Efficient power handling due to low on-resistance
- Versatile applications with high voltage tolerance
- Fast switching speed for improved performance
Disadvantages
- Sensitivity to static electricity and overvoltage conditions
- Heat dissipation may be a concern at high currents
Working Principles
The NVF3055L108T1G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET conducts, allowing power to flow through the device.
Detailed Application Field Plans
The NVF3055L108T1G is suitable for various power electronics applications, including: - Switching power supplies - Motor control - LED lighting - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models
- IRF3205: Similar specifications and package type
- FQP30N06L: Lower voltage rating but compatible for certain applications
- STP55NF06: Higher voltage rating and lower on-resistance
Note: The alternative models listed above are provided as examples and may vary based on specific application requirements.
This comprehensive entry provides an in-depth understanding of the NVF3055L108T1G, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de NVF3055L108T1G em soluções técnicas
What is the NVF3055L108T1G?
- The NVF3055L108T1G is a power MOSFET designed for various technical solutions requiring high efficiency and low power dissipation.
What are the key features of the NVF3055L108T1G?
- The key features include a low on-resistance, high current capability, and a compact package design for efficient heat dissipation.
In what applications can the NVF3055L108T1G be used?
- It is commonly used in applications such as voltage regulation, motor control, power supplies, and LED lighting.
What is the maximum voltage and current rating of the NVF3055L108T1G?
- The maximum voltage rating is typically around 60V, and the maximum continuous drain current is approximately 12A.
How does the NVF3055L108T1G contribute to energy efficiency in technical solutions?
- The low on-resistance of the MOSFET helps minimize power losses and improve overall energy efficiency in various applications.
What are the thermal considerations when using the NVF3055L108T1G in technical solutions?
- Proper heat sinking and thermal management are important to ensure the MOSFET operates within its temperature limits for reliable performance.
Are there any specific PCB layout guidelines for integrating the NVF3055L108T1G?
- Yes, it's recommended to follow the manufacturer's guidelines for PCB layout to optimize performance and minimize parasitic effects.
Can the NVF3055L108T1G be used in automotive applications?
- Yes, it is suitable for certain automotive applications where its specifications meet the requirements.
What are the typical switching characteristics of the NVF3055L108T1G?
- The MOSFET exhibits fast switching speeds and low gate charge, making it suitable for high-frequency switching applications.
Where can I find detailed technical specifications and application notes for the NVF3055L108T1G?
- Detailed technical specifications and application notes can be found in the datasheet provided by the manufacturer or distributor of the MOSFET.