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MUN5213T1G - Encyclopedia Entry
Introduction
The MUN5213T1G is a semiconductor device belonging to the category of NPN transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: NPN Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: High voltage capability, low saturation voltage, and high current gain
- Package: SOT-23
- Essence: Small signal transistor for general purpose applications
- Packaging/Quantity: Tape and Reel, 3000 units per reel
Specifications
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Power Dissipation (PD): 225mW
- Transition Frequency (fT): 250MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The MUN5213T1G has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High voltage capability
- Low saturation voltage
- High current gain
Advantages and Disadvantages
Advantages
- Suitable for general purpose applications
- Small package size
- High transition frequency
Disadvantages
- Limited collector current compared to other transistors in the same category
Working Principles
The MUN5213T1G operates based on the principles of NPN transistor amplification and switching. When a small current flows into the base, it controls a much larger current between the collector and emitter.
Detailed Application Field Plans
The MUN5213T1G is commonly used in the following applications: - Audio amplifiers - Signal amplification circuits - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to the MUN5213T1G include: - BC547 - 2N3904 - 2SC945
In conclusion, the MUN5213T1G is a versatile NPN transistor with high voltage capability, suitable for various general-purpose applications in electronic circuits.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de MUN5213T1G em soluções técnicas
What is MUN5213T1G?
- MUN5213T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
What are the key features of MUN5213T1G?
- The key features of MUN5213T1G include low saturation voltage, high current capability, and high hFE (DC current gain).
What are the typical applications of MUN5213T1G?
- MUN5213T1G is commonly used in audio amplifiers, signal processing circuits, motor control, and general purpose switching applications.
What is the maximum collector current of MUN5213T1G?
- The maximum collector current of MUN5213T1G is 500mA.
What is the maximum collector-emitter voltage of MUN5213T1G?
- The maximum collector-emitter voltage of MUN5213T1G is 40V.
What is the thermal resistance of MUN5213T1G?
- The thermal resistance of MUN5213T1G is typically 357°C/W.
Is MUN5213T1G suitable for high-frequency applications?
- No, MUN5213T1G is not specifically designed for high-frequency applications due to its moderate transition frequency.
Can MUN5213T1G be used in low-power applications?
- Yes, MUN5213T1G can be used in low-power applications due to its low saturation voltage and high current gain.
Does MUN5213T1G require external biasing?
- Yes, MUN5213T1G requires external biasing for proper operation in amplifier and switching circuits.
Are there any recommended alternative transistors to MUN5213T1G?
- Some recommended alternative transistors to MUN5213T1G include BC547, 2N3904, and 2N2222A, depending on specific application requirements.