MMBFJ175LT1

Product Overview

Category

The MMBFJ175LT1 belongs to the category of field-effect transistors (FETs).

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

• Low power consumption
• High input impedance
• Small package size

Package

The MMBFJ175LT1 is typically available in a SOT-23 package.

Essence

This FET is essential for controlling the flow of current in various electronic applications.

Packaging/Quantity

The MMBFJ175LT1 is usually packaged in reels containing a quantity of 3000 units.

Specifications

• Drain-Source Voltage (Vds): 30V
• Gate-Source Voltage (Vgs): ±20V
• Drain Current (Id): 50mA
• Total Power Dissipation: 225mW

Detailed Pin Configuration

The MMBFJ175LT1 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low leakage current
• Fast switching speed
• Wide voltage and current range compatibility

Advantages

• Small form factor
• Low power consumption
• High input impedance

Disadvantages

• Limited maximum drain current
• Susceptible to electrostatic discharge damage

Working Principles

The MMBFJ175LT1 operates based on the principle of controlling the conductivity between the source and drain terminals using the voltage applied to the gate terminal.

Detailed Application Field Plans

The MMBFJ175LT1 is widely used in the following applications: - Signal amplification - Switching circuits - Voltage regulation

Detailed and Complete Alternative Models

Some alternative models to the MMBFJ175LT1 include: - 2N7002 - BS170 - IRF5305

In conclusion, the MMBFJ175LT1 is a versatile field-effect transistor with low power consumption and high input impedance, making it suitable for a wide range of electronic applications.

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