NXP USA Inc.
A imagem pode ser uma representação.
Veja as especificações para detalhes do produto.
BLF4G20-110B,112
Ver detalhes DataSheets

BLF4G20-110B,112 Product Overview

Category

The BLF4G20-110B,112 belongs to the category of power transistors.

Use

It is used in high-power RF applications such as radio and television broadcasting, industrial heating, and medical equipment.

Characteristics

  • High power handling capability
  • High frequency operation
  • Robust construction for reliability
  • Suitable for demanding RF applications

Package

The BLF4G20-110B,112 is typically available in a ceramic package with metal flange for efficient heat dissipation.

Essence

The essence of the BLF4G20-110B,112 lies in its ability to amplify and handle high-power RF signals with efficiency and reliability.

Packaging/Quantity

The BLF4G20-110B,112 is usually packaged individually and is available in varying quantities based on customer requirements.

Specifications

  • Frequency: 2.45 GHz
  • Power Output: 110 W
  • Voltage: 28 V
  • Gain: 20 dB
  • Efficiency: 60%

Detailed Pin Configuration

The BLF4G20-110B,112 has a detailed pin configuration with specific connections for input, output, biasing, and thermal management. Refer to the datasheet for the exact pinout details.

Functional Features

  • High power amplification
  • Broadband operation
  • Excellent linearity
  • Thermal stability

Advantages

  • High power handling capability
  • Wide frequency range
  • Reliable performance
  • Efficient heat dissipation

Disadvantages

  • Higher cost compared to lower power alternatives
  • Requires careful thermal management

Working Principles

The BLF4G20-110B,112 operates on the principles of RF power amplification using advanced semiconductor technology to achieve high power handling and efficiency.

Detailed Application Field Plans

The BLF4G20-110B,112 is ideally suited for use in: - Broadcast transmitters - Industrial RF heating systems - Medical diathermy equipment

Detailed and Complete Alternative Models

Some alternative models to the BLF4G20-110B,112 include: - BLF6G20-110B,112 - BLF4G25-110B,112 - BLF4G20-120B,112

In conclusion, the BLF4G20-110B,112 is a high-power RF transistor designed for demanding applications that require efficient and reliable amplification of RF signals.

[Word count: 319]

Liste 10 perguntas e respostas comuns relacionadas à aplicação de BLF4G20-110B,112 em soluções técnicas

  1. What is the maximum operating temperature of BLF4G20-110B,112?

    • The maximum operating temperature of BLF4G20-110B,112 is 200°C.

  2. What is the typical output power of BLF4G20-110B,112 at 1100 MHz?

    • The typical output power of BLF4G20-110B,112 at 1100 MHz is 20W.

  3. What is the recommended supply voltage for BLF4G20-110B,112?

    • The recommended supply voltage for BLF4G20-110B,112 is 32V.

  4. What is the typical gain of BLF4G20-110B,112 at 1100 MHz?

    • The typical gain of BLF4G20-110B,112 at 1100 MHz is 15dB.

  5. What is the input and output impedance of BLF4G20-110B,112?

    • The input and output impedance of BLF4G20-110B,112 is 50 ohms.

  6. Is BLF4G20-110B,112 suitable for broadband applications?

    • Yes, BLF4G20-110B,112 is suitable for broadband applications.

  7. What is the typical efficiency of BLF4G20-110B,112 at maximum output power?

    • The typical efficiency of BLF4G20-110B,112 at maximum output power is 55%.

  8. Does BLF4G20-110B,112 require external matching networks?

    • Yes, BLF4G20-110B,112 requires external matching networks for optimal performance.

  9. What are the typical harmonic levels of BLF4G20-110B,112?

    • The typical harmonic levels of BLF4G20-110B,112 are better than -30dBc.

  10. Is BLF4G20-110B,112 RoHS compliant?

    • Yes, BLF4G20-110B,112 is RoHS compliant.