BFS17W,135 Product Overview

Introduction

The BFS17W,135 is a semiconductor product belonging to the category of RF transistors. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Amplification of radio frequency signals
• Characteristics: High-frequency operation, low noise figure, and high gain
• Package: SOT343 (SC-70)
• Essence: Silicon NPN Planar RF Transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Frequency Range: 100 MHz to 6 GHz
• Collector-Base Voltage (VCBO): 20 V
• Collector Current (IC): 50 mA
• Power Dissipation (Ptot): 200 mW
• Transition Frequency (fT): 12 GHz
• Noise Figure (NF): 1.2 dB

Detailed Pin Configuration

The BFS17W,135 has a three-pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High-frequency operation suitable for RF applications
• Low noise figure for improved signal quality
• High gain for signal amplification

Advantages and Disadvantages

Advantages

• Wide frequency range coverage
• Low noise figure enhances signal quality
• Compact SOT343 package for space-constrained designs

Disadvantages

• Limited collector-base voltage (VCBO) compared to some alternatives
• Moderate collector current (IC) rating

Working Principles

The BFS17W,135 operates based on the principles of NPN bipolar junction transistors, where the flow of charge carriers amplifies the input RF signal.

Detailed Application Field Plans

The BFS17W,135 is ideal for use in the following applications: - Radio frequency amplifiers - Wireless communication systems - Radar systems - Microwave circuits

Detailed and Complete Alternative Models

Some alternative models to the BFS17W,135 include: - BFR93A - BFU550X - BFG591

In conclusion, the BFS17W,135 is a versatile RF transistor with wide frequency range coverage, low noise figure, and high gain, making it suitable for various RF amplification applications.

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