SI2304DS,215

Product Overview

• Category: MOSFET Transistor
• Use: Power switching applications
• Characteristics: Low on-resistance, high-speed switching, small package size
• Package: SOT-23
• Essence: Efficient power management
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Max): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.7A
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 3.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V

Detailed Pin Configuration

• Pin 1 (G): Gate
• Pin 2 (D): Drain
• Pin 3 (S): Source

Functional Features

• High-speed switching
• Low on-resistance
• Enhanced power efficiency

Advantages

• Small package size
• Efficient power management
• Suitable for power switching applications

Disadvantages

• Limited voltage and current handling capabilities
• Sensitivity to static electricity

Working Principles

The SI2304DS,215 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans

1. Battery Management Systems: Utilized in battery protection circuits due to its low on-resistance and high-speed switching capabilities.
2. DC-DC Converters: Used in step-down converters for efficient power management in portable electronic devices.
3. Motor Control: Employed in motor drive circuits for controlling power flow with minimal losses.

Detailed and Complete Alternative Models

1. SI2304BDS-T1-GE3
   • Similar specifications and package size
2. SI2304DDS-T1-GE3
   • Higher voltage and current ratings
3. SI2304EDS-T1-GE3
   • Lower on-resistance and gate charge

This comprehensive entry provides detailed information about the SI2304DS,215 MOSFET transistor, including its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.