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PUMH2/DG/B3,115
Product Category: Transistor
Basic Information Overview: - Category: Bipolar (BJT) Transistor - Use: Amplification and Switching - Characteristics: High current gain, low saturation voltage - Package: SOT416 (SC-75) - Essence: NPN Silicon Transistor - Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications: - Collector-Base Voltage (VCBO): 40V - Collector-Emitter Voltage (VCEO): 40V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Total Power Dissipation (PTOT): 200mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration:
1. Base
2. Emitter
3. Collector
Functional Features: - High current gain (hFE) - Low saturation voltage - Fast switching speed
Advantages: - Small package size - Suitable for high-density PCB designs - Wide operating temperature range
Disadvantages: - Limited collector current compared to larger transistors - Sensitive to overvoltage conditions
Working Principles: The PUMH2/DG/B3,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its layers to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplification circuits - Signal amplification in sensor interfaces - Switching applications in portable electronics
Detailed and Complete Alternative Models: - BC847B,215 - MMBT3904LT1G - 2N3904
This comprehensive entry provides an in-depth understanding of the PUMH2/DG/B3,115 transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de PUMH2/DG/B3,115 em soluções técnicas
What is PUMH2/DG/B3,115?
- PUMH2/DG/B3,115 is a specific type of transistor with high voltage and current capabilities, commonly used in technical solutions requiring robust power handling.
What are the typical applications of PUMH2/DG/B3,115?
- PUMH2/DG/B3,115 transistors are often used in power management circuits, motor control systems, and high-voltage switching applications.
What are the key electrical characteristics of PUMH2/DG/B3,115?
- The key electrical characteristics include high voltage and current ratings, low saturation voltage, and fast switching speeds.
How does PUMH2/DG/B3,115 compare to other transistors in similar applications?
- PUMH2/DG/B3,115 offers higher voltage and current capabilities compared to many standard transistors, making it suitable for demanding technical solutions.
What are the thermal considerations when using PUMH2/DG/B3,115 in technical solutions?
- Thermal management is crucial due to the high power dissipation of PUMH2/DG/B3,115. Proper heat sinking and thermal design are essential for reliable operation.
Are there any specific layout or PCB design considerations for PUMH2/DG/B3,115?
- Yes, the layout should minimize parasitic inductance and capacitance, and the PCB should be designed to handle high currents and voltages.
What are the recommended operating conditions for PUMH2/DG/B3,115?
- Operating within the specified voltage, current, and temperature limits is crucial for ensuring the reliability and longevity of PUMH2/DG/B3,115 in technical solutions.
Can PUMH2/DG/B3,115 be used in automotive applications?
- Yes, PUMH2/DG/B3,115 is suitable for automotive applications such as electric vehicle power systems and motor control in internal combustion engine vehicles.
What are the protection mechanisms needed when using PUMH2/DG/B3,115 in technical solutions?
- Overcurrent protection, voltage clamping, and ESD protection are important to safeguard PUMH2/DG/B3,115 from potential damage in harsh operating conditions.
Where can I find detailed application notes and reference designs for PUMH2/DG/B3,115?
- Detailed application notes and reference designs for PUMH2/DG/B3,115 can typically be found on the manufacturer's website or through authorized distributors.