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PDTA114EM,315
Product Category: Transistor
Basic Information Overview: - Category: NPN Bipolar Transistor - Use: Amplification and Switching - Characteristics: High current gain, low voltage drop - Package: SOT416 (SC-75) - Essence: Small signal transistor - Packaging/Quantity: Tape & Reel, 3000 pieces per reel
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (Ptot): 200mW - Transition Frequency (ft): 250MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration:
1. Base
2. Emitter
3. Collector
Functional Features: - High current gain - Low saturation voltage - Fast switching speed
Advantages: - Small package size - Suitable for high-density PCB designs - Wide operating temperature range
Disadvantages: - Limited collector current compared to larger transistors - Sensitive to overvoltage conditions
Working Principles: The PDTA114EM,315 operates as a current amplifier or switch by controlling the flow of current between the collector and emitter terminals based on the current flowing into its base terminal.
Detailed Application Field Plans: - Audio amplification circuits - Signal amplification in sensor interfaces - Switching applications in portable electronic devices
Detailed and Complete Alternative Models: - BC847B,215 - MMBT3904LT1G - 2N3904
This NPN bipolar transistor, PDTA114EM,315, is a versatile component suitable for various amplification and switching applications due to its small package size, high current gain, and low voltage drop. It finds extensive use in audio amplification circuits, sensor interfaces, and portable electronic devices. While it offers advantages such as a wide operating temperature range and suitability for high-density PCB designs, it has limitations in terms of collector current and sensitivity to overvoltage conditions. Engineers can consider alternative models like BC847B,215, MMBT3904LT1G, and 2N3904 based on specific application requirements.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de PDTA114EM,315 em soluções técnicas
What is PDTA114EM,315?
- PDTA114EM,315 is a high-performance NPN bipolar transistor in a small SOT883 package, designed for general-purpose amplifier and switching applications.
What are the key features of PDTA114EM,315?
- The key features include high current gain, low collector-emitter saturation voltage, and low equivalent on-resistance.
What are the typical applications of PDTA114EM,315?
- Typical applications include audio amplification, signal processing, level shifting, and general switching tasks in various technical solutions.
What is the maximum collector current of PDTA114EM,315?
- The maximum collector current is 100mA, making it suitable for low-power applications.
What is the voltage rating of PDTA114EM,315?
- The device has a maximum collector-base voltage of 50V and a maximum emitter-base voltage of 5V.
Is PDTA114EM,315 suitable for surface mount technology (SMT) applications?
- Yes, PDTA114EM,315 is designed for SMT applications, with its small SOT883 package enabling compact and space-efficient designs.
Does PDTA114EM,315 require external biasing components?
- It can be used in common-emitter configuration without requiring external biasing components, simplifying circuit design.
What are the temperature specifications for PDTA114EM,315?
- The device is specified for operation over a temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
Can PDTA114EM,315 be used in battery-powered applications?
- Yes, its low collector-emitter saturation voltage and high current gain make it suitable for battery-powered applications where power efficiency is crucial.
Are there any known limitations or considerations when using PDTA114EM,315 in technical solutions?
- While PDTA114EM,315 offers high performance in a small package, designers should consider its maximum ratings and thermal characteristics to ensure reliable operation in their specific technical solutions.