Veja as especificações para detalhes do produto.
BUK9MGP-55PTS,518
Product Overview
Category: Power MOSFET
Use: Switching applications
Characteristics: High power handling, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power management
Packaging/Quantity: Tape and Reel
Specifications
- Voltage - Drain-Source Breakdown (Max): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance for efficient power management
- Fast switching speed for improved performance
- High power handling capability for demanding applications
Advantages and Disadvantages
Advantages: - High power handling - Low on-resistance - Fast switching speed
Disadvantages: - Higher gate charge compared to some alternative models - Relatively higher input capacitance
Working Principles
The BUK9MGP-55PTS,518 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in switching applications.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
- IRF540N
- FDP8870
- STP75NF75
Note: The above list is not exhaustive and serves as a starting point for alternative model exploration.
This content provides a comprehensive overview of the BUK9MGP-55PTS,518, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de BUK9MGP-55PTS,518 em soluções técnicas
What is BUK9MGP-55PTS,518?
- BUK9MGP-55PTS,518 is a N-channel 55 V MOSFET with a low on-state resistance designed for use in various technical solutions.
What are the key specifications of BUK9MGP-55PTS,518?
- The key specifications include a voltage rating of 55 V, a continuous drain current of 75 A, and a low on-state resistance.
In what technical applications can BUK9MGP-55PTS,518 be used?
- BUK9MGP-55PTS,518 can be used in applications such as power supplies, motor control, and automotive systems.
What are the thermal characteristics of BUK9MGP-55PTS,518?
- The MOSFET has a low thermal resistance and is designed to operate within specified temperature ranges for reliable performance.
How does BUK9MGP-55PTS,518 contribute to energy efficiency in technical solutions?
- BUK9MGP-55PTS,518's low on-state resistance helps minimize power losses and improve overall energy efficiency in various applications.
Are there any recommended operating conditions for BUK9MGP-55PTS,518?
- It is important to operate BUK9MGP-55PTS,518 within its specified voltage, current, and temperature limits for optimal performance and reliability.
Does BUK9MGP-55PTS,518 require any specific driver or control circuitry?
- BUK9MGP-55PTS,518 may require appropriate gate drive circuitry to ensure proper switching and protection against overvoltage or overcurrent conditions.
What are the typical failure modes associated with BUK9MGP-55PTS,518?
- Common failure modes may include overcurrent stress, overtemperature conditions, and voltage transients, which should be considered in the design of protective measures.
Can BUK9MGP-55PTS,518 be used in high-frequency switching applications?
- The MOSFET's datasheet provides information on its switching characteristics and suitability for high-frequency operation.
Where can I find detailed application notes or reference designs using BUK9MGP-55PTS,518?
- Application notes and reference designs for BUK9MGP-55PTS,518 can often be found on the manufacturer's website or through technical support channels.