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APTM100A46FT1G

APTM100A46FT1G

Product Overview

Category

The APTM100A46FT1G belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The APTM100A46FT1G is typically available in a TO-247 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The APTM100A46FT1G is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 460V
  • Continuous Drain Current (ID): 100A
  • On-Resistance (RDS(on)): 0.046 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 180nC
  • Avalanche Energy (EAS): 900mJ

Detailed Pin Configuration

The APTM100A46FT1G typically has three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - G (Pin 1): Gate - D (Pin 2): Drain - S (Pin 3): Source

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.
  • Low gate charge facilitates easier drive circuit design.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications.
  • Low on-resistance leads to reduced power dissipation.
  • Fast switching speed enhances overall system performance.

Disadvantages

  • Higher gate capacitance may require more complex drive circuitry.
  • Limited availability of alternative models with similar specifications.

Working Principles

The APTM100A46FT1G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The APTM100A46FT1G is commonly used in the following application fields: - Power supplies - Motor control - Inverters - Industrial automation - Renewable energy systems

Detailed and Complete Alternative Models

While the APTM100A46FT1G offers unique specifications, alternative models with similar characteristics include: - APTM120A60FT1G - APTM080A30FT1G - APTM150A70FT1G

In conclusion, the APTM100A46FT1G is a high-performance power MOSFET that caters to demanding high-power switching applications across various industries.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de APTM100A46FT1G em soluções técnicas

  1. What is the maximum voltage rating of APTM100A46FT1G?

    • The maximum voltage rating of APTM100A46FT1G is 4600V.
  2. What is the maximum current rating of APTM100A46FT1G?

    • The maximum current rating of APTM100A46FT1G is 100A.
  3. What type of package does APTM100A46FT1G come in?

    • APTM100A46FT1G comes in a TO-247 package.
  4. What are the typical applications for APTM100A46FT1G?

    • APTM100A46FT1G is commonly used in high power switching applications, motor control, and power supplies.
  5. What is the on-state resistance of APTM100A46FT1G?

    • The on-state resistance of APTM100A46FT1G is typically 0.046 ohms.
  6. What is the operating temperature range of APTM100A46FT1G?

    • APTM100A46FT1G has an operating temperature range of -55°C to 150°C.
  7. Does APTM100A46FT1G have built-in protection features?

    • Yes, APTM100A46FT1G has built-in overcurrent and overtemperature protection.
  8. Is APTM100A46FT1G suitable for use in automotive applications?

    • Yes, APTM100A46FT1G is suitable for use in automotive applications due to its high power handling capabilities.
  9. What gate drive voltage is required for APTM100A46FT1G?

    • APTM100A46FT1G typically requires a gate drive voltage of 15V.
  10. Can APTM100A46FT1G be used in parallel to handle higher currents?

    • Yes, APTM100A46FT1G can be used in parallel to handle higher currents by connecting multiple devices in parallel with proper current sharing techniques.