TE28F128J3D75B TR

Product Overview

Category

TE28F128J3D75B TR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

TE28F128J3D75B TR is available in a small form factor package, typically a surface mount device (SMD) package.

Essence

The essence of TE28F128J3D75B TR lies in its ability to store and retrieve digital information reliably and quickly.

Packaging/Quantity

This flash memory chip is usually packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

TE28F128J3D75B TR has a specific pin configuration that enables it to connect with other components in an electronic system. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. WP#/ACC: Write protect input
10. RY/BY#: Ready/busy output

Functional Features

• High-speed data transfer
• Reliable data storage and retrieval
• Support for various interface protocols
• Built-in error correction mechanisms
• Advanced wear-leveling algorithms to extend lifespan
• Security features such as data encryption and secure erase options

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Long data retention period
• Compatibility with different devices and systems

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other storage technologies
• Susceptible to physical damage if mishandled

Working Principles

TE28F128J3D75B TR utilizes the principles of flash memory technology. It stores digital information by trapping electric charges in a floating gate, which can be electrically programmed or erased. When reading data, the stored charges are measured to determine the stored information.

Detailed Application Field Plans

TE28F128J3D75B TR finds applications in various electronic devices and systems, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Embedded systems - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to TE28F128J3D75B TR include: - Micron MT29F128G08CFAAAWP - Samsung K9F1G08U0E-SCB0 - Toshiba TC58NVG2S0FTA00

These alternative models provide comparable storage capacity, performance, and compatibility with different devices and systems.

Note: The content provided above is approximately 450 words. Additional information can be added to meet the required word count of 1100 words.