RC28F640P30T85A

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High capacity, fast access speed, non-volatile, low power consumption
• Package: TSSOP-56
• Essence: Flash memory chip
• Packaging/Quantity: 250 units per reel

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Access Time: 85 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The RC28F640P30T85A has a total of 56 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. CE#
36. OE#
37. WE#
38. WP#
39. RY/BY#
40. DQ0
41. DQ1
42. DQ2
43. DQ3
44. DQ4
45. DQ5
46. DQ6
47. DQ7
48. VSS
49. NC
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. NC

Functional Features

• High-speed data transfer with an access time of 85 nanoseconds
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy-efficient operation
• Erase and program cycles up to 100,000 times
• Wide operating temperature range (-40°C to +85°C)
• Data retention of up to 20 years

Advantages and Disadvantages

Advantages: - Large memory capacity of 64 Megabits (8 Megabytes) - Fast access speed for efficient data retrieval - Non-volatile nature ensures data integrity during power loss - Low power consumption for extended battery life - Wide operating temperature range allows usage in various environments

Disadvantages: - Limited erase and program cycles compared to some other memory technologies - Higher cost compared to lower capacity memory chips

Working Principles

The RC28F640P30T85A is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve digital information. The memory cells are organized into a grid-like structure, with each cell capable of storing one bit of data. To write data, the memory cells are electrically programmed by trapping electrons in the floating gate. To read data, the charge level in the floating gate is measured, determining the stored value.

Detailed Application Field Plans

The RC28F640P30T85A is commonly used in various electronic devices and systems that require non-volatile memory storage. Some of the application fields include:

1. Consumer Electronics: Used in digital cameras, MP3 players, and portable gaming devices for data storage.
2. Automotive: Integrated into automotive infotainment systems, navigation units, and engine control modules for storing critical information.
3. Industrial Automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and industrial control systems for data logging and configuration storage.
4. Networking Equipment: Incorporated into routers, switches, and network appliances for firmware storage and system configuration.

Detailed and Complete Alternative Models

1. RC28F640P30T85B

   • Similar specifications and features as RC28F640P30T85A
   • Different package: TSOP-56

2. RC28F640P30T85C

   • Similar specifications and features as RC28F640P30T85A
   • Different package: BGA-63

3. RC28F640P30T85D

   • Similar specifications and features as RC28F640P30T85