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MT47H64M16HR-25E L:H TR

MT47H64M16HR-25E L:H TR

Product Overview

Category

The MT47H64M16HR-25E L:H TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

  • High-speed operation: The MT47H64M16HR-25E L:H TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
  • Large capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip can store a significant amount of data.
  • Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
  • High reliability: It has been engineered to provide stable performance and withstand various environmental conditions.

Package

The MT47H64M16HR-25E L:H TR is available in a compact and standardized package, which ensures compatibility with different electronic devices.

Essence

As a DRAM chip, the essence of the MT47H64M16HR-25E L:H TR lies in its ability to store and retrieve data quickly and efficiently, contributing to the overall performance of electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Part Number: MT47H64M16HR-25E L:H TR
  • Memory Type: Dynamic Random Access Memory (DRAM)
  • Capacity: 64 megabits (8 megabytes)
  • Operating Voltage: 2.5V
  • Speed Grade: 25E
  • Package Type: L:H TR
  • Pin Count: 60

Detailed Pin Configuration

The MT47H64M16HR-25E L:H TR features a 60-pin configuration. The pins are assigned specific functions, including data input/output, address lines, control signals, and power supply connections. A detailed pin configuration diagram can be found in the product datasheet.

Functional Features

  • Fast data access: The MT47H64M16HR-25E L:H TR offers quick access to stored data, facilitating efficient processing and multitasking.
  • Refresh mechanism: This DRAM chip incorporates an internal refresh mechanism that ensures data integrity over time.
  • Burst mode operation: It supports burst mode, allowing for consecutive data transfers without the need for repeated addressing.
  • Low latency: The chip minimizes the delay between data requests and responses, enhancing overall system performance.

Advantages and Disadvantages

Advantages

  • High-speed operation enables fast data processing.
  • Large capacity allows for storing significant amounts of data.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package ensures compatibility with various electronic devices.
  • Reliable performance in different environmental conditions.

Disadvantages

  • Requires periodic refreshing to maintain data integrity.
  • Sensitive to electrical noise and voltage fluctuations.
  • Relatively higher cost compared to other memory technologies.

Working Principles

The MT47H64M16HR-25E L:H TR operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the chip. To read or write data, the chip utilizes a combination of address lines, control signals, and data input/output lines. The refresh mechanism periodically recharges the capacitors to prevent data loss.

Detailed Application Field Plans

The MT47H64M16HR-25E L:H TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed operation, large capacity, and low power consumption make it suitable for applications that require efficient data storage and retrieval.

Detailed and Complete Alternative Models

  • MT47H64M16HR-25E L:H TR2
  • MT47H64M16HR-25E L:H TR3
  • MT47H64M16HR-25E L:H TR4
  • MT47H64M16HR-25E L:H TR5

These alternative models offer similar specifications and functionality to the MT47H64M16HR-25E L:H TR, providing users with options based on their specific requirements.

Note: The content provided above is a sample entry and may not reflect actual product information. Please refer to the manufacturer's documentation for accurate details.

Liste 10 perguntas e respostas comuns relacionadas à aplicação de MT47H64M16HR-25E L:H TR em soluções técnicas

  1. Question: What is the maximum operating frequency of the MT47H64M16HR-25E L:H TR?
    Answer: The maximum operating frequency of this memory module is 800 MHz.

  2. Question: What is the capacity of the MT47H64M16HR-25E L:H TR?
    Answer: This memory module has a capacity of 1 GB (Gigabyte).

  3. Question: What is the voltage requirement for the MT47H64M16HR-25E L:H TR?
    Answer: The voltage requirement for this memory module is 1.8V.

  4. Question: Is the MT47H64M16HR-25E L:H TR compatible with DDR3 technology?
    Answer: Yes, this memory module is based on DDR3 technology.

  5. Question: Can the MT47H64M16HR-25E L:H TR be used in laptops or desktop computers?
    Answer: Yes, this memory module can be used in both laptops and desktop computers, as long as they support DDR3 memory.

  6. Question: Does the MT47H64M16HR-25E L:H TR support ECC (Error Correction Code)?
    Answer: No, this memory module does not support ECC.

  7. Question: What is the temperature range for the MT47H64M16HR-25E L:H TR?
    Answer: The temperature range for this memory module is -40°C to +85°C.

  8. Question: Can the MT47H64M16HR-25E L:H TR be used in industrial applications?
    Answer: Yes, this memory module is suitable for industrial applications due to its wide temperature range and reliability.

  9. Question: Does the MT47H64M16HR-25E L:H TR have any built-in security features?
    Answer: No, this memory module does not have any built-in security features.

  10. Question: Is the MT47H64M16HR-25E L:H TR a single-rank or dual-rank memory module?
    Answer: This memory module is a single-rank module.