MT44K32M18RB-125:A TR

Basic Information Overview

• Category: Memory Product
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: MT44K32M18RB-125:A TR
• Capacity: 32 megabits (4 megabytes)
• Organization: 4 banks of 8,388,608 words x 18 bits
• Voltage Supply: 1.2V
• Speed Grade: 125 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT44K32M18RB-125:A TR has a total of 78 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3-20 | DQ[17:0] | Data input/output pins | | 21 | WE | Write enable | | 22 | CAS | Column address strobe | | 23 | RAS | Row address strobe | | ... | ... | ... | | 77 | CKE | Clock enable | | 78 | CK | Clock input |

Functional Features

• High-speed operation for quick data access
• Low power consumption for energy efficiency
• Error correction capabilities for data integrity
• Multiple banks for simultaneous access to different memory locations
• Self-refresh mode for maintaining data during power loss

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast data transfer rate enables quick retrieval of information - Low power consumption prolongs battery life in portable devices - Error correction capabilities ensure data integrity

Disadvantages: - Relatively high cost compared to other memory options - Limited write endurance, which may require periodic replacement - Sensitivity to environmental factors such as temperature and humidity

Working Principles

The MT44K32M18RB-125:A TR is based on the principle of dynamic random-access memory (DRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information needs to be periodically refreshed to maintain its integrity.

When a read or write operation is performed, the memory controller sends row and column addresses to select the desired memory location. The data is then transferred through the input/output pins using the appropriate control signals (e.g., RAS, CAS, WE).

Detailed Application Field Plans

The MT44K32M18RB-125:A TR is commonly used in various electronic devices that require non-volatile memory for long-term data storage. Some application fields include: - Personal computers - Servers - Mobile devices (smartphones, tablets) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT44K32M18RB-125:B TR
• MT44K32M18RB-125:C TR
• MT44K32M18RB-125:D TR
• MT44K32M18RB-125:E TR

These alternative models offer similar specifications and functionality but may differ in certain characteristics or features.