MT44K32M18RB-093E IT:A TR

Product Overview

Category

The MT44K32M18RB-093E IT:A TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used as a high-density, high-speed random access memory (RAM) for various electronic devices and systems.

Characteristics

• High density: The MT44K32M18RB-093E IT:A TR offers a large storage capacity, allowing it to store a significant amount of data.
• High speed: With its advanced architecture and design, this memory device provides fast read and write operations, enabling efficient data processing.
• Low power consumption: The product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable performance: The MT44K32M18RB-093E IT:A TR ensures reliable data storage and retrieval, ensuring the integrity of critical information.

Package

This product is available in a compact and standardized package, which facilitates easy integration into electronic systems. The specific package type may vary depending on the manufacturer's specifications.

Essence

The MT44K32M18RB-093E IT:A TR is an essential component in modern electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The product is typically packaged in reels or trays, providing protection during transportation and storage. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Random Access Memory (RAM)
• Organization: 32M words x 18 bits
• Supply Voltage: 1.2V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: Up to 933 Mbps
• Interface: Double Data Rate 4 (DDR4)
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT44K32M18RB-093E IT:A TR features a specific pin configuration that enables proper connectivity and functionality within electronic systems. The detailed pin configuration can be found in the product datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer: The MT44K32M18RB-093E IT:A TR supports fast data transfer rates, allowing for efficient communication between the memory device and the system.
• Error correction: This product incorporates error correction techniques to ensure data integrity and reliability.
• Low latency: With its optimized design, the memory device minimizes access delays, resulting in reduced latency during read and write operations.
• Self-refresh mode: The product includes a self-refresh mode, which allows it to conserve power when not actively accessed.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable performance
• Error correction capabilities

Disadvantages

• Specific compatibility requirements with system architectures
• Higher cost compared to lower-capacity memory options

Working Principles

The MT44K32M18RB-093E IT:A TR operates based on the principles of DDR4 memory technology. It utilizes advanced circuitry and architecture to enable high-speed data transfer and reliable storage of information. The memory cells within the device store data as electrical charges, which can be accessed and manipulated through various addressing and control signals.

Detailed Application Field Plans

The MT44K32M18RB-093E IT:A TR finds applications in a wide range of electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Mobile devices - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

1. MT44K64M18RB-093E IT:A TR

   • Memory Type: Random Access Memory (RAM)
   • Organization: 64M words x 18 bits
   • Supply Voltage: 1.2V
   • Data Rate: Up to 933 Mbps
   • Interface: DDR4
   • Package Type: BGA

2. MT44K16M18RB-093E IT:A TR

   • Memory Type: Random Access Memory (RAM)
   • Organization: 16M words x 18 bits
   • Supply Voltage: 1.2V
   • Data Rate: Up to 933 Mbps
   • Interface: DDR4
   • Package Type: BGA

3. MT44K128M18RB-093E IT:A TR

   • Memory Type: Random Access Memory (RAM)
   • Organization: 128M words x 18 bits
   • Supply Voltage: 1.2V
   • Data Rate: Up to 933 Mbps
   • Interface: DDR4
   • Package Type: BGA

Note: The above alternative models are provided for reference and may have different specifications and characteristics. It is recommended to consult the respective datasheets for detailed