MT29F16G08ABCBBH1-12:B

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • High speed
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Flash memory
• Packaging/Quantity: Individual units or reels

Specifications

• Model: MT29F16G08ABCBBH1-12:B
• Capacity: 16GB
• Organization: 2G x 8
• Voltage Supply: 2.7V - 3.6V
• Access Time: 120 ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• RoHS Compliant: Yes

Detailed Pin Configuration

The MT29F16G08ABCBBH1-12:B has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0 | Address input bit 0 | | 3 | A1 | Address input bit 1 | | ... | ... | ... | | 46 | DQ14 | Data input/output bit 14 | | 47 | DQ15 | Data input/output bit 15 | | 48 | GND | Ground |

Functional Features

• High-speed data transfer
• Reliable data retention
• Block erase and program operations
• Error correction code (ECC) support
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact form factor
• High reliability and durability

Disadvantages

• Limited write endurance compared to other memory technologies
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F16G08ABCBBH1-12:B is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The memory cells are grouped into blocks, which can be erased or programmed independently.

To read data from the memory, the controller sends an address to specify the location, and the stored data is retrieved. To write data, the controller applies the appropriate voltage levels to program the desired information into the memory cells.

Detailed Application Field Plans

The MT29F16G08ABCBBH1-12:B is widely used in various electronic devices that require non-volatile storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

• MT29F16G08ABABA
• MT29F16G08ABACAH1
• MT29F16G08ABACAWP
• MT29F16G08ABACBH1
• MT29F16G08ABACBWP

These alternative models offer similar specifications and functionality, providing options for different application requirements.

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