MT29F16G08ABABAWP-IT:B

Product Overview

Category

MT29F16G08ABABAWP-IT:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F16G08ABABAWP-IT:B offers a storage capacity of 16 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F16G08ABABAWP-IT:B comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F16G08ABABAWP-IT:B NAND flash memory is typically packaged in small surface-mount packages. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 16 gigabytes
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F16G08ABABAWP-IT:B is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. NC
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase Operations: MT29F16G08ABABAWP-IT:B supports efficient read, program, and erase operations at the page level.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It employs wear-leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.
• Bad Block Management: MT29F16G08ABABAWP-IT:B includes a bad block management system that identifies and manages defective blocks, ensuring optimal performance.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures consistent operation over time.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: Like all NAND flash memories, MT29F16G08ABABAWP-IT:B has a limited number of program/erase cycles before it may become unreliable.
• Cost: NAND flash memory can be relatively expensive compared to other storage technologies.

Working Principles

MT29F16G08ABABAWP-IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased, allowing for data storage and retrieval. The memory cells are arranged in pages, blocks, and planes, with each page typically storing multiple kilobytes of data. When data is written or read, the appropriate voltage levels are applied to the corresponding pins, enabling the desired operation.

Detailed Application Field Plans

MT29F16G08ABABAWP-IT:B finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT29F16G08ABACAWP-IT:B
• MT29F16G08ABADAWP-IT:B
• MT29F16G08ABAEAWP-IT:B