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MT29F128G08CKCCBH2-12:C

MT29F128G08CKCCBH2-12:C

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High capacity
    • High speed
    • Low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory
  • Packaging/Quantity: Individual units or reels

Specifications

  • Model: MT29F128G08CKCCBH2-12:C
  • Capacity: 128GB
  • Organization: 8Gb x 16
  • Voltage Supply: 2.7V - 3.6V
  • Interface: Toggle NAND
  • Operating Temperature: -40°C to +85°C
  • Speed: Up to 400MB/s (Read), up to 200MB/s (Write)

Detailed Pin Configuration

  1. VCC
  2. GND
  3. CE#
  4. RE#
  5. WE#
  6. CLE
  7. ALE
  8. WP#
  9. R/B#
  10. DQ0
  11. DQ1
  12. DQ2
  13. DQ3
  14. DQ4
  15. DQ5
  16. DQ6
  17. DQ7
  18. NC
  19. NC
  20. NC

Functional Features

  • High-speed data transfer
  • Reliable data retention
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient data organization

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Compact package size
  • High reliability and durability

Disadvantages

  • Relatively higher cost compared to other memory devices
  • Limited endurance cycles

Working Principles

MT29F128G08CKCCBH2-12:C is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information, allowing for high-density storage. The device uses a toggle NAND interface for fast data transfer between the memory and the host system.

Detailed Application Field Plans

  • Solid-state drives (SSDs)
  • Embedded systems
  • Consumer electronics (e.g., smartphones, tablets)
  • Automotive applications
  • Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F128G08CKCCBH2-12:G
  2. MT29F128G08CKCCBH2-12:A
  3. MT29F128G08CKCCBH2-12:B
  4. MT29F128G08CKCCBH2-12:D

These alternative models offer similar specifications and functionality to MT29F128G08CKCCBH2-12:C, providing options for different application requirements.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de MT29F128G08CKCCBH2-12:C em soluções técnicas

  1. Question: What is the capacity of the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the voltage requirement for the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C operates at a voltage range of 2.7V to 3.6V.

  3. Question: What is the interface used by the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C uses a NAND Flash interface.

  4. Question: What is the maximum operating frequency of the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C can operate at a maximum frequency of 100 MHz.

  5. Question: Does the MT29F128G08CKCCBH2-12:C support hardware ECC?
    Answer: Yes, the MT29F128G08CKCCBH2-12:C supports hardware ECC (Error Correction Code) for data integrity.

  6. Question: What is the typical endurance of the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C has a typical endurance of 10,000 program/erase cycles.

  7. Question: Is the MT29F128G08CKCCBH2-12:C compatible with industrial temperature ranges?
    Answer: Yes, the MT29F128G08CKCCBH2-12:C is designed to operate in industrial temperature ranges (-40°C to 85°C).

  8. Question: Does the MT29F128G08CKCCBH2-12:C support wear-leveling algorithms?
    Answer: Yes, the MT29F128G08CKCCBH2-12:C supports wear-leveling algorithms to evenly distribute data writes across the memory cells.

  9. Question: What is the page size of the MT29F128G08CKCCBH2-12:C?
    Answer: The MT29F128G08CKCCBH2-12:C has a page size of 4 kilobytes.

  10. Question: Can the MT29F128G08CKCCBH2-12:C be used in automotive applications?
    Answer: Yes, the MT29F128G08CKCCBH2-12:C is suitable for automotive applications due to its high reliability and wide temperature range support.