MT28F800B5SG-8 B

Product Overview

Category

The MT28F800B5SG-8 B belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Low power consumption
• Durable and reliable

Package

The MT28F800B5SG-8 B is available in a compact and standardized package that ensures easy integration into electronic devices. The package is designed to protect the memory chip from external factors such as moisture, dust, and physical damage.

Essence

The essence of the MT28F800B5SG-8 B lies in its ability to store and retrieve data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

The MT28F800B5SG-8 B is typically packaged individually or in bulk quantities, depending on the requirements of the manufacturer or customer.

Specifications

• Storage Capacity: 8 GB
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The MT28F800B5SG-8 B has a specific pin configuration that enables proper communication and integration with the host device. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground connection
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RY/BY#: Ready/busy status

Functional Features

• High-speed data transfer
• Block erase and program operations
• Error correction code (ECC) for data integrity
• Automatic sleep mode for power saving
• Wear-leveling algorithm for extended lifespan

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Durable and reliable
• Suitable for a wide range of electronic devices

Disadvantages

• Relatively higher cost compared to other memory options
• Limited number of erase/program cycles

Working Principles

The MT28F800B5SG-8 B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. The memory cells are made up of floating-gate transistors that can retain charge even when the power is turned off. Data is written by applying a high voltage to the control gate, which traps electrons in the floating gate. Reading data involves detecting the presence or absence of charge in the memory cells.

Detailed Application Field Plans

The MT28F800B5SG-8 B finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. MT29F8G08ABACAWP: 8 GB NAND Flash Memory with similar specifications.
2. S34ML08G101TFI000: 8 GB NAND Flash Memory with different packaging options.
3. IS43TR16256A-125KBLI: 8 GB Mobile DDR3 SDRAM with comparable storage capacity.

These alternative models offer similar or comparable features and can be considered as alternatives to the MT28F800B5SG-8 B.

In conclusion, the MT28F800B5SG-8 B is a high-capacity flash memory product that offers fast and reliable data storage for various electronic devices. Its characteristics, specifications, pin configuration, functional features, advantages, and disadvantages make it a versatile choice for many applications in the electronics industry.