MT28F320J3FS-11 MET

Product Overview

Category

MT28F320J3FS-11 MET belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Enables quick access to stored data.
• Large storage capacity: Offers ample space for storing files, documents, and multimedia content.
• Compact size: The small form factor allows for integration into compact electronic devices.
• Reliable performance: Provides consistent and stable data storage capabilities.

Package

MT28F320J3FS-11 MET is typically packaged in a surface-mount package (SMP) or a ball grid array (BGA) package. These packages ensure easy integration onto printed circuit boards (PCBs).

Essence

The essence of MT28F320J3FS-11 MET lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

This product is usually available in reels or trays, with quantities varying depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 32 gigabits (4 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 90 ns (max)

Detailed Pin Configuration

The pin configuration of MT28F320J3FS-11 MET is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RE#: Read enable control signal
8. WP#: Write protect control signal
9. RY/BY#: Ready/busy status output
10. VSS: Ground

Functional Features

• High-speed data transfer: Enables fast read and write operations.
• Error correction capabilities: Includes built-in error correction codes to ensure data integrity.
• Block erase and program operations: Allows for efficient management of data storage.
• Low power consumption: Optimized power usage for extended battery life in portable devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed data transfer
• Compact size
• Reliable performance
• Error correction capabilities

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation occurs.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F320J3FS-11 MET utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically erased and reprogrammed. When reading data, the stored charge is measured to determine the binary value.

Detailed Application Field Plans

MT28F320J3FS-11 MET finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT28F320J3FS-11 MET include: - Samsung K9F4G08U0D - Micron MT29F32G08CBACAWP - Toshiba TC58NVG2S0FTA00

These models offer similar specifications and functionality, providing alternatives for different design requirements.

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