MT28F004B5VG-8 T

Product Overview

Category

MT28F004B5VG-8 T belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F004B5VG-8 T is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT28F004B5VG-8 T is typically packaged in trays or reels, with each package containing a specific quantity of flash memory chips.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT28F004B5VG-8 T is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. CE (Chip Enable)
4. OE (Output Enable)
5. WE (Write Enable)
6. I/O0-I/O7 (Data Input/Output)
7. RY/BY# (Ready/Busy Output)
8. WP# (Write Protect)
9. RESET# (Reset)

Functional Features

• Fast read and write operations
• Block erase capability
• Automatic program and erase algorithms
• Error correction code (ECC) support
• Data protection features (write protect, reset)

Advantages and Disadvantages

Advantages

• High-speed data transfer
• Low power consumption
• Compact size for easy integration
• Reliable and durable
• Block erase capability allows efficient memory management

Disadvantages

• Limited storage capacity compared to higher-capacity flash memory options
• Higher cost per unit compared to lower-capacity flash memory options

Working Principles

MT28F004B5VG-8 T utilizes a floating-gate transistor technology to store digital information. It uses electrical charges to represent binary data, with the presence or absence of charge indicating the value of each bit.

During write operations, the memory cells are programmed by applying high voltages to the appropriate control gates. Reading data involves sensing the voltage levels in the memory cells to determine the stored information.

Detailed Application Field Plans

MT28F004B5VG-8 T finds applications in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT28F004B5VG-10 T: Similar to MT28F004B5VG-8 T, but with a faster access time of 100 ns.
2. MT28F004B5VG-12 T: Similar to MT28F004B5VG-8 T, but with a faster access time of 120 ns.
3. MT28F004B5VG-16 T: Similar to MT28F004B5VG-8 T, but with a faster access time of 160 ns.

These alternative models offer different access times to cater to specific performance requirements.

In conclusion, MT28F004B5VG-8 T is a flash memory product that provides high-speed data storage and retrieval capabilities. Its compact size, low power consumption, and reliability make it suitable for a wide range of electronic devices. While it has limitations in terms of storage capacity and cost, its functional features and working principles make it an essential component in various applications.