M58LR256KB70ZQ5Z

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High capacity, low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory chip
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Capacity: 256 kilobits (32 kilobytes)
• Organization: 32K x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 nanoseconds
• Interface: Serial Peripheral Interface (SPI)

Detailed Pin Configuration

The M58LR256KB70ZQ5Z has a total of 8 pins, which are as follows:

1. Chip Select (/CS) - Active low input used to enable the device.
2. Serial Clock (SCK) - Input for synchronizing data transfer.
3. Serial Data Input (SI) - Input for shifting data into the device.
4. Serial Data Output (SO) - Output for shifting data out of the device.
5. Write Protect (/WP) - Active low input used to protect the memory from write operations.
6. Ground (GND) - Reference ground for the device.
7. Power Supply (VCC) - Positive power supply for the device.
8. Hold (/HOLD) - Active low input used to pause serial communication.

Functional Features

• Non-volatile memory: Retains data even when power is removed.
• High-speed access: Allows for quick read and write operations.
• Low power consumption: Ideal for battery-powered devices.
• SPI interface: Enables easy integration with microcontrollers.
• Write protection: Prevents accidental modification of stored data.
• Small form factor: Suitable for space-constrained applications.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access time - Low power consumption - Compact size - Easy integration with microcontrollers

Disadvantages: - Limited write endurance - Relatively higher cost compared to other memory technologies

Working Principles

The M58LR256KB70ZQ5Z is based on Flash memory technology. It utilizes a grid of memory cells, where each cell can store multiple bits of data. The data is stored by trapping electric charges within the memory cells, which can be accessed and modified using electrical signals.

During read operations, the device retrieves the stored data by applying appropriate voltages to the memory cells and sensing the resulting electrical currents. Write operations involve erasing and reprogramming the memory cells to store new data.

Detailed Application Field Plans

The M58LR256KB70ZQ5Z is commonly used in various electronic devices that require non-volatile memory storage. Some potential application fields include:

1. Consumer Electronics: Used in digital cameras, portable media players, and gaming consoles for storing firmware, settings, and user data.
2. Automotive Systems: Employed in car infotainment systems, navigation units, and engine control modules for data storage and firmware updates.
3. Industrial Automation: Utilized in programmable logic controllers (PLCs), industrial sensors, and control systems for storing configuration data and program code.
4. Medical Devices: Integrated into medical equipment such as patient monitors, infusion pumps, and diagnostic devices for data logging and firmware storage.

Detailed and Complete Alternative Models

1. M25P16 - 16 megabit (2 megabyte) SPI Flash memory chip.
2. AT24C256 - 256 kilobit (32 kilobyte) I2C EEPROM memory chip.
3. W25Q128JVSIQ - 128 megabit (16 megabyte) SPI Flash memory chip with Quad-SPI interface.

These alternative models offer similar functionality and capacity, providing options for different design requirements.

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