M29W800FB70N3E

Product Overview

Category

M29W800FB70N3E belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The data stored in M29W800FB70N3E remains intact even when power is turned off.
• High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The flash memory allows for quick retrieval of data.
• Reliable: M29W800FB70N3E has a high endurance and can withstand numerous read and write cycles.
• Compact package: It comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: The flash memory operates efficiently, consuming minimal power.

Package and Quantity

M29W800FB70N3E is typically packaged in a surface-mount device (SMD) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: NOR Flash
• Capacity: 8 Megabits (1 Megabyte)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29W800FB70N3E flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. OE#: Output enable control signal
8. RP#: Reset/Ready pin
9. WP#: Write protect control signal

Functional Features

• Erase and Program Operations: M29W800FB70N3E supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors of the flash memory can be locked to prevent accidental erasure or modification.
• Status Register: The status register provides information about the device's operation and can be read by the host system.
• Hardware Reset: The RP# pin allows for a hardware reset, ensuring reliable system initialization.

Advantages and Disadvantages

Advantages

• High storage capacity in a compact form factor
• Fast access time for quick data retrieval
• Reliable and durable with high endurance
• Low power consumption for efficient operation
• Flexible erase and program operations

Disadvantages

• Limited storage capacity compared to other flash memory options
• Parallel interface may not be suitable for all applications
• Higher cost per megabyte compared to some alternative models

Working Principles

M29W800FB70N3E utilizes NOR flash memory technology. It stores data in individual memory cells that consist of floating-gate transistors. These transistors can retain charge even when power is removed, making the memory non-volatile. The data is accessed by sending specific address signals and control signals through the pins of the flash memory module.

Detailed Application Field Plans

M29W800FB70N3E finds application in various electronic devices that require non-volatile data storage. Some common application fields include: - Mobile devices (smartphones, tablets) - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to M29W800FB70N3E: - M29W800FT70N6E - M29W800DB70N6E - M29W800DT70N6E

These models may have slight variations in specifications or package options, but they serve as suitable alternatives for data storage needs.

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