M29W256GH70N3E - English Editing Encyclopedia Entry

Product Overview

Category

M29W256GH70N3E belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The M29W256GH70N3E offers a large storage capacity of 256 gigabytes (GB), allowing users to store a significant amount of data.
• Fast data transfer rate: With its high-speed interface, this flash memory enables quick data read and write operations.
• Reliable performance: The M29W256GH70N3E is known for its durability and long lifespan, ensuring reliable data storage over time.
• Low power consumption: This flash memory consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The M29W256GH70N3E comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The M29W256GH70N3E is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256 gigabytes (GB)
• Interface: Universal Flash Storage (UFS)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 600 megabytes per second (MB/s)
• Operating Temperature Range: -25°C to +85°C
• Package Type: SMT package

Detailed Pin Configuration

The M29W256GH70N3E has a pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. WE - Write enable
5. RE - Read enable
6. A0-A18 - Address lines
7. DQ0-DQ63 - Data input/output lines
8. RY/BY# - Ready/Busy status output
9. WP#/ACC - Write protect or accelerated programming control
10. RESET# - Reset signal

Functional Features

• High-speed data access: The M29W256GH70N3E offers fast read and write operations, allowing for quick access to stored data.
• Error correction: This flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The M29W256GH70N3E employs a wear-leveling algorithm that evenly distributes data writes across memory cells, extending the lifespan of the device.
• Security features: This flash memory includes built-in security features such as data encryption and password protection to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Relatively high cost compared to lower-capacity flash memory options
• Limited compatibility with older devices that do not support the UFS interface

Working Principles

The M29W256GH70N3E utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using electrical charges. When data is written, the charges are adjusted to represent the desired information. During read operations, the charges are measured to retrieve the stored data.

Detailed Application Field Plans

The M29W256GH70N3E is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

1. M29W256GH70N3F
2. M29W256GH70N3G
3. M29W256GH70N3H
4. M29W256GH70N3J

These alternative models offer similar specifications and functionality to the M29W256GH70N3E, providing users with a range of options for their specific requirements.

In conclusion, the M29W256GH70N3E flash memory offers a high-capacity, fast, and reliable storage solution for various electronic devices. Its compact form factor and low power consumption make it an ideal choice for modern portable devices. However, potential drawbacks include higher cost and limited compatibility with older devices. Overall, the M29W256GH70N3E is a versatile flash memory product that meets the demands of data-intensive applications.

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