M29F800FT55M3E2

Product Overview

Category

The M29F800FT55M3E2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F800FT55M3E2 retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The device provides quick access to stored data with a read access time of 55 nanoseconds.
• Low power consumption: It operates efficiently with low power requirements.
• Reliable: The M29F800FT55M3E2 ensures data integrity and reliability through advanced error correction techniques.

Package and Quantity

The M29F800FT55M3E2 is available in a surface-mount package. Each package contains one unit of the memory device.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Access Time: 55 Nanoseconds
• Supply Voltage: 3.3 Volts
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Pin Count: 48

Detailed Pin Configuration

The M29F800FT55M3E2 has a total of 48 pins. Here is the detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. VSS: Ground

Functional Features

• High-speed data transfer: The M29F800FT55M3E2 allows for fast read and write operations, enabling efficient data transfer.
• Easy integration: It can be easily integrated into existing electronic systems due to its standard pin configuration and interface compatibility.
• Error correction: The device incorporates advanced error correction techniques to ensure data integrity and reliability.
• Low power consumption: The M29F800FT55M3E2 operates with low power requirements, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Easy integration into existing systems

Disadvantages

• Limited storage capacity compared to newer memory technologies
• Relatively higher cost per unit of storage compared to alternative memory options

Working Principles

The M29F800FT55M3E2 is based on Flash memory technology. It utilizes a grid of memory cells that store data by trapping electric charges. These charges represent binary information (0s and 1s). The memory cells can be electrically programmed (written) or erased using specific voltage levels applied to the control pins. During read operations, the stored charges are sensed and converted back into digital data.

Detailed Application Field Plans

The M29F800FT55M3E2 finds applications in various fields, including:

1. Computer systems: Used for BIOS storage, firmware updates, and data storage in embedded systems.
2. Mobile devices: Enables storage of operating system code, user data, and multimedia files in smartphones and tablets.
3. Automotive electronics: Utilized for storing critical data in automotive control units, infotainment systems, and navigation systems.
4. Industrial automation: Used for program storage in programmable logic controllers (PLCs) and other industrial control systems.
5. Consumer electronics: Enables data storage in devices such as digital cameras, gaming consoles, and media players.

Detailed and Complete Alternative Models

1. M29F800FB5AN6E2
2. M29F800FT70N6E2
3. M29F800FB5BN6E2
4. M29F800FT70M3E2
5. M29F800FB5CN6E2

These alternative models offer similar functionality and specifications to the M29F800FT55M3E2, providing options for different application requirements.

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