M29F800FB55M3E2

Product Overview

Category

M29F800FB55M3E2 belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The M29F800FB55M3E2 retains stored data even when power is turned off.
• High capacity: This flash memory chip has a capacity of 8 megabits (1 megabyte).
• Fast access time: It offers quick read and write operations, allowing for efficient data transfer.
• Reliable: The M29F800FB55M3E2 has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package and Quantity

The M29F800FB55M3E2 is available in a surface-mount package. The specific package type may vary depending on the manufacturer. It is typically sold in reels or trays containing multiple units.

Specifications

• Capacity: 8 megabits (1 megabyte)
• Supply voltage: 2.7V - 3.6V
• Access time: 55 nanoseconds
• Interface: Parallel
• Operating temperature range: -40°C to +85°C

Pin Configuration

The M29F800FB55M3E2 has a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. A0-A18: Address input pins
3. DQ0-DQ7: Data input/output pins
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#/BYTE#: Reset/byte enable control input
8. VSS: Ground

Functional Features

• Erase and program operations: The M29F800FB55M3E2 supports both sector erase and byte programming operations.
• Block protection: It offers hardware-based block protection to prevent accidental modification or erasure of specific memory blocks.
• Automatic sleep mode: This flash memory chip has a built-in sleep mode that reduces power consumption when not in use.
• Error correction: It incorporates error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Block protection feature enhances data security

Disadvantages

• Limited write endurance compared to other types of memory
• Higher cost per unit compared to some alternative memory technologies

Working Principles

The M29F800FB55M3E2 utilizes the principles of floating-gate transistors to store and retrieve data. It employs a combination of electrical charges to represent binary information (0s and 1s). The data is stored in memory cells, which can be electrically programmed and erased.

Application Field Plans

The M29F800FB55M3E2 finds applications in various electronic devices, including: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles

Alternative Models

• M29F800FT70N6E2
• M29F800FB70N6E2
• M29F800FT70N3E2
• M29F800FB70N3E2

These alternative models offer similar specifications and functionality to the M29F800FB55M3E2, providing options for different design requirements.

In conclusion, the M29F800FB55M3E2 is a high-capacity flash memory chip that offers fast access times, low power consumption, and reliable data storage. Its block protection feature enhances data security, making it suitable for a wide range of electronic devices. While it has limited write endurance compared to other memory technologies, its advantages outweigh the disadvantages, making it a popular choice in the industry.

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