M29F200BB70N6T TR

Product Overview

Category

M29F200BB70N6T TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F200BB70N6T TR retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient operation.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The M29F200BB70N6T TR is designed to consume minimal power during operation.

Package

The M29F200BB70N6T TR comes in a compact surface-mount package, making it suitable for integration into small-sized electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, while consuming minimal power and offering a high storage capacity.

Packaging/Quantity

The M29F200BB70N6T TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 megabits (256 kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: Surface Mount

Detailed Pin Configuration

The M29F200BB70N6T TR features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. VSS: Ground

Functional Features

• Erase and Program Operations: The M29F200BB70N6T TR supports both erase and program operations, allowing for flexible data manipulation.
• Sector Architecture: It is organized into multiple sectors, enabling selective erasure and programming of specific sections of memory.
• Hardware Data Protection: This device incorporates various mechanisms to protect stored data from accidental modification or corruption.
• Automatic Standby Mode: The M29F200BB70N6T TR enters a low-power standby mode when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Flexible sector architecture

Disadvantages

• Limited compatibility with certain older systems
• Higher cost compared to some alternative models

Working Principles

The M29F200BB70N6T TR utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge trapping to retain information even when power is removed. The device uses electrical signals to perform erase and program operations, modifying the charge levels within the memory cells.

Detailed Application Field Plans

The M29F200BB70N6T TR finds applications in various fields, including: 1. Consumer electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for data storage. 2. Automotive: Employed in automotive infotainment systems, instrument clusters, and navigation devices. 3. Industrial automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers. 4. Medical devices: Integrated into medical equipment for storing patient data, imaging, and diagnostics.

Detailed and Complete Alternative Models

1. M29F200BT70N6E TR
2. M29F200FB70N6T TR
3. M29F200FT70N6E TR
4. M29F200GB70N6T TR
5. M29F200HB70N6E TR

These alternative models offer similar specifications and functionality to the M29F200BB70N6T TR, providing options for different application requirements.

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