JS28F256P33TFE

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns (Max)
• Erase/Program Suspend/Erase Suspend: Yes
• Organization: 32M x 8 bits
• Block Size: 64 Kbytes
• Page Size: 2 Kbytes
• Endurance: 100,000 Program/Erase Cycles (Minimum)
• Data Retention: 20 Years (Minimum)

Pin Configuration

The JS28F256P33TFE has a total of 48 pins. The pin configuration is as follows:

1. VPP (Programming Voltage)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Input/Output)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RE# (Read Enable)
8. RP#/BYTE# (Reset/Byte#)
9. RY/BY# (Ready/Busy#)
10. WP#/ACC (Write Protect/Accumulator)
11. VCC (Power Supply)
12. VSS (Ground)

Functional Features

• High-speed read and write operations
• Reliable data storage with error correction capabilities
• Built-in algorithms for efficient programming and erasing
• Low power consumption for extended battery life
• Suspend and resume operations for flexible usage
• Advanced security features to protect stored data

Advantages

• Large storage capacity for storing extensive data
• Fast access times for quick retrieval of information
• Low power consumption, suitable for portable devices
• Robust design ensures data integrity and reliability
• Flexible programming and erasing options
• Enhanced security features protect sensitive data

Disadvantages

• Higher cost compared to other memory technologies
• Limited endurance compared to some newer memory types
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

The JS28F256P33TFE is based on NOR flash memory technology. It utilizes a grid of floating-gate transistors to store data. When writing data, the memory cells are programmed by trapping electrons in the floating gate, altering the threshold voltage of the transistor. Reading data involves sensing the voltage level of the memory cell to determine the stored data.

Application Field Plans

The JS28F256P33TFE is widely used in various electronic devices that require non-volatile data storage. Some application fields include:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for storing firmware, operating systems, and user data.
2. Automotive: Utilized in automotive infotainment systems, navigation systems, and engine control units for reliable data storage.
3. Industrial Automation: Integrated into industrial control systems, PLCs (Programmable Logic Controllers), and robotics for program storage and data logging.
4. Medical Devices: Employed in medical equipment such as patient monitors, ultrasound machines, and diagnostic devices for storing critical data.
5. Networking Equipment: Used in routers, switches, and network storage devices for firmware storage and configuration data.

Alternative Models

1. JS28F256P33TFA: Similar specifications with different package type (TSOP)
2. JS28F512P30TFA: Higher capacity (512 Megabits) with similar specifications
3. JS28F128P30BFE: Lower capacity (128 Megabits) with similar specifications
4. JS28F064P30BFE: Lower capacity (64 Megabits) with similar specifications

These alternative models provide options based on specific requirements and compatibility with different systems.

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