JS28F128J3F75G

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in various packaging options (e.g., surface mount) with quantity per package varying based on manufacturer specifications.

Specifications

• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Up to 75 megabytes per second
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The JS28F128J3F75G flash memory IC has a specific pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output
10. WP#: Write protect control
11. NC: No connection
12. VPP: Programming voltage supply

Note: The above pin configuration is a general representation and may vary depending on the manufacturer's implementation.

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile memory
• Efficient programming and erasing operations
• Low power consumption
• Error correction capabilities

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Long data retention period - Wide operating temperature range - High endurance for program/erase cycles

Disadvantages: - Higher cost compared to other memory options - Limited compatibility with certain devices due to parallel interface

Working Principles

The JS28F128J3F75G flash memory operates based on the principles of floating-gate transistors. It utilizes a grid of memory cells, each consisting of a floating gate and a control gate. Data is stored by trapping electric charge within the floating gate, which alters the transistor's conductive properties.

During programming, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer onto the floating gate. This process traps the charge, representing a binary value (0 or 1). Erasing is achieved by applying a higher voltage that removes the trapped charge from the floating gate.

Detailed Application Field Plans

The JS28F128J3F75G flash memory finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Embedded systems

Its high capacity, fast read/write speeds, and reliability make it suitable for storing large amounts of data in these devices.

Alternative Models

Several alternative models with similar specifications and functionality are available in the market. Some notable alternatives to the JS28F128J3F75G include:

1. Micron MT29F128G08CFAAAWP
2. Samsung K9F1G08U0D
3. Toshiba TC58NVG0S3ETA00

These alternatives offer comparable performance and can be considered based on specific requirements and availability.

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