JS28F00AM29EWHB TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel
• Supply Voltage: 3.0V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration (Detailed)

The JS28F00AM29EWHB TR flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Block erase capability for efficient memory management
• Built-in error correction codes (ECC) for data integrity
• Low power consumption during standby mode
• Hardware and software protection mechanisms for secure data storage

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Long data retention period - Reliable and durable - Low power consumption

Disadvantages: - Limited endurance (program/erase cycles) - Higher cost compared to other memory technologies

Working Principles

The JS28F00AM29EWHB TR flash memory utilizes a floating gate transistor structure to store and retrieve data. When programming, an electrical charge is applied to the floating gate, trapping electrons and altering the transistor's threshold voltage. This change in threshold voltage represents a binary value (0 or 1). During read operations, the stored charge is measured to determine the stored data.

Application Field Plans

The JS28F00AM29EWHB TR flash memory is widely used in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems

Alternative Models

Other flash memory ICs that can be considered as alternatives to the JS28F00AM29EWHB TR include:

1. Micron MT29F2G08ABAEAWP
2. Samsung K9F2G08U0M
3. Toshiba TC58NVG2S0HTA00

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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