EDB4064B4PB-1DIT-F-D TR

Product Overview

Category

EDB4064B4PB-1DIT-F-D TR belongs to the category of electronic components.

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed performance
• Compact size
• Low power consumption
• Reliable data retention
• Wide temperature range operation

Package

The EDB4064B4PB-1DIT-F-D TR comes in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage capabilities for electronic devices.

Packaging/Quantity

The EDB4064B4PB-1DIT-F-D TR is typically packaged in trays or reels, with each package containing a specific quantity of units. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 64 Megabits (8 Megabytes)
• Organization: 4M x 16 bits
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Interface: Double Data Rate (DDR) Synchronous DRAM
• Clock Frequency: Up to 200 MHz
• Burst Length: 4 or 8
• Refresh Mode: Auto-refresh and Self-refresh

Detailed Pin Configuration

The EDB4064B4PB-1DIT-F-D TR has a total of 66 pins. Below is the detailed pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. BA0
41. BA1
42. /CKE
43. /CLK
44. /DQM0
45. /DQM1
46. /DQS0
47. /DQS1
48. DM0
49. DM1
50. VREF
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data transfer
• Low latency
• On-chip error correction
• Auto-refresh and self-refresh modes for maintaining data integrity
• Support for burst mode operations
• Power-saving features

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size for space-constrained applications
• Low power consumption for energy efficiency
• Reliable data retention even in harsh operating conditions
• Compatibility with DDR interfaces

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to some alternative memory options

Working Principles

The EDB4064B4PB-1DIT-F-D TR operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity. When accessed, the data is read or written by activating specific rows and columns within the memory array.

Detailed Application Field Plans

The EDB4064B4PB-1DIT-F-D TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the EDB4064B4PB-1DIT-F-D TR include: - EDB4064B4PB