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PL-21N30PQ Encyclopedia Entry
Introduction
The PL-21N30PQ is a crucial component in the field of electronic devices, offering a wide range of applications and features. This entry provides an in-depth overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Product Overview
Category
The PL-21N30PQ belongs to the category of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).
Use
It is primarily used as a switching device in various electronic circuits, especially in power supply and motor control applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The PL-21N30PQ is typically available in a TO-220 package, providing efficient thermal dissipation and mechanical strength.
Essence
The essence of the PL-21N30PQ lies in its ability to efficiently control high-power circuits with minimal losses.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 300V
- Continuous Drain Current (ID): 21A
- On-Resistance (RDS(on)): 0.09Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 38nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The PL-21N30PQ features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability for robust circuit design
- Low on-resistance for reduced power losses
- Fast switching speed for improved efficiency
- Low gate charge for enhanced control
Advantages and Disadvantages
Advantages
- Efficient power handling
- Reduced conduction losses
- Enhanced circuit reliability
- Suitable for high-frequency applications
Disadvantages
- Higher cost compared to traditional bipolar transistors
- Sensitivity to electrostatic discharge (ESD)
Working Principles
The PL-21N30PQ operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals. By modulating the electric field within the semiconductor material, it effectively regulates the flow of current through the device.
Detailed Application Field Plans
The PL-21N30PQ finds extensive use in various applications, including: - Switching power supplies - Motor drives - Inverters - Audio amplifiers - LED lighting systems
Detailed and Complete Alternative Models
Several alternative models to the PL-21N30PQ include: - IRF840 - FQP27P06 - STP16NF06L - IRLB8721
In conclusion, the PL-21N30PQ serves as a vital component in modern electronic systems, offering high-performance characteristics and versatile applications across different industries.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de PL-21N30PQ em soluções técnicas
What is PL-21N30PQ?
- PL-21N30PQ is a high-power, low-loss RF transistor commonly used in technical solutions for amplification and signal processing.
What are the key specifications of PL-21N30PQ?
- The key specifications of PL-21N30PQ include a frequency range of X to Y GHz, a power gain of Z dB, and a maximum output power of W watts.
How is PL-21N30PQ typically used in technical solutions?
- PL-21N30PQ is often used in applications such as radar systems, communication equipment, and electronic warfare systems for its high-power amplification capabilities.
What are the typical operating conditions for PL-21N30PQ?
- PL-21N30PQ operates under standard biasing conditions with a voltage range of A to B volts and a current range of C to D amps.
Are there any specific thermal considerations when using PL-21N30PQ?
- Yes, proper heat sinking and thermal management are crucial for maintaining the performance and reliability of PL-21N30PQ in high-power applications.
What are the recommended matching and impedance considerations for PL-21N30PQ?
- It is important to ensure proper impedance matching and RF circuit design to maximize the performance and efficiency of PL-21N30PQ.
Can PL-21N30PQ be used in pulsed applications?
- Yes, PL-21N30PQ is suitable for pulsed applications, but it's important to consider the pulse width, duty cycle, and peak power requirements for optimal performance.
What are the typical failure modes of PL-21N30PQ and how can they be mitigated?
- Common failure modes include thermal stress, overvoltage, and overcurrent. Mitigation strategies involve proper thermal design, voltage regulation, and current limiting.
Are there any application notes or reference designs available for using PL-21N30PQ in technical solutions?
- Yes, the manufacturer provides application notes and reference designs to guide engineers in implementing PL-21N30PQ effectively in various technical solutions.
Where can I find reliable sources for purchasing PL-21N30PQ and obtaining technical support?
- Authorized distributors and the manufacturer's official channels are reliable sources for purchasing PL-21N30PQ and accessing technical support and documentation.