MAGX-000912-250L00

Introduction

MAGX-000912-250L00 is a high-power GaN-on-SiC HEMT transistor designed for use in various RF power applications. This entry provides an overview of the product, including its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: High-power GaN-on-SiC HEMT Transistor
• Use: RF Power Amplification
• Characteristics: High power density, wide bandwidth, and high efficiency
• Package: LGA (Land Grid Array)
• Essence: Utilizes Gallium Nitride on Silicon Carbide technology for high-performance RF power amplification
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on order size

Specifications

• Frequency Range: 0.03 – 2.5 GHz
• Output Power: 250 W
• Voltage: 50 V
• Gain: 17 dB
• Efficiency: 65%
• Thermal Resistance: 0.7 °C/W

Detailed Pin Configuration

The MAGX-000912-250L00 features a 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

• High Power Density: Enables compact designs with high output power.
• Wide Bandwidth: Suitable for multi-band and broadband applications.
• High Efficiency: Reduces power consumption and heat dissipation.
• Robustness: Designed for reliable operation in harsh environments.

Advantages and Disadvantages

Advantages

• High power density enables compact system designs.
• Wide bandwidth supports versatile applications.
• High efficiency reduces power consumption and heat generation.
• Robust construction ensures reliability in demanding conditions.

Disadvantages

• Higher initial cost compared to traditional transistors.
• Sensitive to electrostatic discharge (ESD) due to advanced semiconductor materials.

Working Principles

The MAGX-000912-250L00 utilizes Gallium Nitride on Silicon Carbide technology to achieve high-power RF amplification. When biased and driven with appropriate RF signals, the transistor amplifies the input signal while maintaining high efficiency and linearity.

Detailed Application Field Plans

The MAGX-000912-250L00 is suitable for various RF power applications, including: - Radar Systems - Communication Infrastructure - Electronic Warfare Systems - Test and Measurement Equipment - Industrial Heating and Plasma Generation

Detailed and Complete Alternative Models

• MAGX-000912-100L00: Lower power variant for applications requiring reduced output power.
• MAGX-000912-500L00: Higher power variant for applications demanding increased output power.
• MAGX-000912-250H00: High-frequency variant optimized for specific frequency bands.

In conclusion, the MAGX-000912-250L00 is a high-power GaN-on-SiC HEMT transistor offering exceptional performance in RF power amplification applications. Its high power density, wide bandwidth, and efficiency make it a compelling choice for demanding RF systems.

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