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IXFN36N110P

IXFN36N110P

Product Overview

Category

The IXFN36N110P belongs to the category of power MOSFETs.

Use

It is commonly used in high-power applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IXFN36N110P is typically available in a TO-264 package.

Essence

This power MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 1100V
  • Current Rating: 36A
  • On-State Resistance: 0.065 ohms
  • Gate Threshold Voltage: 4V
  • Power Dissipation: 300W

Detailed Pin Configuration

The IXFN36N110P typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast switching times
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Reduced heat dissipation
  • Improved system reliability

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful consideration of heat dissipation in designs

Working Principles

The IXFN36N110P operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The IXFN36N110P is well-suited for use in the following applications: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Industrial power converters

Detailed and Complete Alternative Models

Some alternative models to the IXFN36N110P include: - IRFP4668PbF - STW45NM50FD - FDPF51N25

In conclusion, the IXFN36N110P power MOSFET offers high-performance characteristics suitable for demanding power management applications. Its high voltage and current ratings, along with fast switching capabilities, make it an ideal choice for various industrial and commercial systems.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de IXFN36N110P em soluções técnicas

  1. What is the maximum voltage rating of IXFN36N110P?

    • The maximum voltage rating of IXFN36N110P is 1100V.
  2. What is the maximum current rating of IXFN36N110P?

    • The maximum current rating of IXFN36N110P is 36A.
  3. What are the typical applications of IXFN36N110P?

    • IXFN36N110P is commonly used in applications such as motor drives, inverters, and power supplies.
  4. What is the on-state resistance of IXFN36N110P?

    • The on-state resistance of IXFN36N110P is typically around 0.11 ohms.
  5. What type of package does IXFN36N110P come in?

    • IXFN36N110P is available in a TO-268 package.
  6. Is IXFN36N110P suitable for high-frequency switching applications?

    • Yes, IXFN36N110P is suitable for high-frequency switching due to its fast switching characteristics.
  7. What is the maximum junction temperature of IXFN36N110P?

    • The maximum junction temperature of IXFN36N110P is 175°C.
  8. Does IXFN36N110P require a heat sink for operation?

    • Depending on the application and operating conditions, a heat sink may be required for optimal performance of IXFN36N110P.
  9. Can IXFN36N110P be used in parallel to increase current handling capability?

    • Yes, IXFN36N110P can be used in parallel to increase the overall current handling capability.
  10. Are there any recommended gate driver ICs for driving IXFN36N110P?

    • Some recommended gate driver ICs for driving IXFN36N110P include IR2110, IR2104, and MCP14E4.