IS64WV102416BLL-10MA3-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Non-volatile storage
• Package: Ball Grid Array (BGA)
• Essence: Non-volatile memory storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: IS64WV102416BLL-10MA3-TR
• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Density: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 48 pins

Detailed Pin Configuration

The IS64WV102416BLL-10MA3-TR has a total of 48 pins. The pin configuration is as follows:

| Pin No. | Pin Name | Description | |---------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 3 | DQ0-DQ15 | Data inputs/outputs | | 4 | WE | Write Enable | | 5 | OE | Output Enable | | 6 | CE | Chip Enable | | 7 | UB | Upper Byte Enable | | 8 | LB | Lower Byte Enable | | ... | ... | ... | | 48 | GND | Ground |

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient use of energy resources.
• Non-volatile storage retains data even when power is removed.
• Synchronous operation enables synchronized data transfers.
• Easy integration with existing systems due to its parallel interface.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption extends battery life in portable devices. - Non-volatile storage eliminates the need for constant data backup. - Synchronous operation simplifies timing requirements. - Parallel interface facilitates easy integration into various applications.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to some alternative memory solutions. - Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

The IS64WV102416BLL-10MA3-TR is a synchronous SRAM that stores data using flip-flops. It operates by reading and writing data in synchronization with an external clock signal. When the chip enable (CE) and output enable (OE) signals are active, the addressed data can be read from or written to the memory array. The write enable (WE) signal controls the write operation, while the address inputs (A0-A19) specify the location of the data within the memory.

Detailed Application Field Plans

The IS64WV102416BLL-10MA3-TR is widely used in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical equipment

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI - 256K x 16-bit Low Voltage CMOS Static RAM
2. AS6C4008-55SIN - 4M x 8-bit High-Speed CMOS Static RAM
3. MT48LC16M16A2P-75IT:C - 256M x 16-bit SDRAM

These alternative models offer similar functionality and can be considered as substitutes for the IS64WV102416BLL-10MA3-TR based on specific application requirements.

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