IS62WV5128EBLL-45BLI

Product Overview

Category

IS62WV5128EBLL-45BLI belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in IS62WV5128EBLL-45BLI is retained even when power is turned off.
• High-speed operation: It offers fast read and write access times, enabling efficient data processing.
• Large capacity: With a storage capacity of 5128 kilobits (or approximately 640 kilobytes), it can store a significant amount of data.
• Low power consumption: IS62WV5128EBLL-45BLI is designed to consume minimal power during operation.
• Reliable: It has built-in error correction mechanisms to ensure data integrity.

Package

IS62WV5128EBLL-45BLI is available in a compact Ball Grid Array (BGA) package.

Essence

The essence of IS62WV5128EBLL-45BLI lies in its ability to provide reliable and high-speed data storage in various electronic devices.

Packaging/Quantity

IS62WV5128EBLL-45BLI is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.0V - 3.6V
• Access Time: 45ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of IS62WV5128EBLL-45BLI is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. WE#
20. CE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. NC
30. GND
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

IS62WV5128EBLL-45BLI offers the following functional features:

• Random access: It allows for direct access to any memory location, enabling efficient data retrieval.
• Byte-wide operation: The memory can be accessed and manipulated at the byte level, providing flexibility in data handling.
• Low power standby mode: It supports a low-power standby mode, reducing power consumption when not actively used.
• Automatic power-down: The device automatically enters a power-down mode when not accessed for a certain period, further conserving energy.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Non-volatile nature ensures data retention even during power loss.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption contributes to energy efficiency.
• Built-in error correction mechanisms enhance data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability in terms of capacity expansion.

Working Principles

IS62WV5128EBLL-45BLI is based on Static Random Access Memory (SRAM) technology. It utilizes flip-flop circuits to store and retrieve data. When a read or write operation is initiated, the address lines specify the memory location, and the data lines transfer the information. The control signals (OE#, WE#, CE#) determine the type of operation (read or write) and enable/disable the memory access.

Detailed Application Field Plans

IS62WV5128EBLL-45BLI finds applications in various electronic devices that require reliable and high-speed data storage. Some potential application fields include:

1. Computers and servers: Used for cache memory, system memory, and buffering purposes.
2. Smartphones and tablets: Provides storage for operating