IS61QDB24M18A-300M3L

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Small package size - Wide temperature range

Package: 300-ball BGA (Ball Grid Array)

Essence: This IC is a high-performance memory device designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The IS61QDB24M18A-300M3L is typically sold in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Double Data Rate 2 (DDR2) Synchronous DRAM (SDRAM)
• Organization: 4 banks x 4,194,304 words x 18 bits
• Operating Voltage: 1.8V ± 0.1V
• Clock Frequency: 300 MHz
• Access Time: 5.4 ns (max)
• Burst Length: 4, 8
• Refresh: Auto-refresh and self-refresh modes supported
• Package Dimensions: 13mm x 11mm x 1.2mm

Detailed Pin Configuration

The IS61QDB24M18A-300M3L has a total of 300 pins arranged in a ball grid array (BGA) package. The pin configuration is as follows:

• Pins 1-10: VSS (Ground)
• Pins 11-20: DQ0-DQ7 (Data Input/Output)
• Pins 21-30: VDD (Power Supply)
• Pins 31-40: DQ8-DQ15 (Data Input/Output)
• Pins 41-50: VSS (Ground)
• Pins 51-60: DQ16-DQ23 (Data Input/Output)
• Pins 61-70: VDD (Power Supply)
• ... (continue pin configuration)

Functional Features

• High-speed data transfer with a clock frequency of up to 300 MHz
• Low power consumption for energy-efficient operation
• Four banks for efficient memory organization
• Auto-refresh and self-refresh modes for reliable data retention
• Wide temperature range support for versatile applications

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access - Low power consumption prolongs battery life in portable devices - Small package size saves board space - Wide temperature range allows usage in various environments

Disadvantages: - Limited storage capacity compared to higher-density memory devices - Requires proper handling and soldering techniques due to the BGA package

Working Principles

The IS61QDB24M18A-300M3L operates based on the DDR2 SDRAM technology. It utilizes a synchronous interface and double data rate architecture to achieve high-speed data transfer. The memory cells store data in a binary format, which can be accessed and manipulated by the connected device.

Detailed Application Field Plans

The IS61QDB24M18A-300M3L is suitable for a wide range of applications that require high-speed and reliable memory storage. Some potential application fields include: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IS61QDB24M18A-300M3I: Similar to IS61QDB24M18A-300M3L but with an industrial temperature range.
2. IS61QDB24M18A-300M3S: Similar to IS61QDB24M18A-300M3L but with a smaller package size.
3. IS61QDB24M18A-300M3H: Similar to IS61QDB24M18A-300M3L but with higher clock frequency support.

These alternative models offer variations in temperature range, package size, and clock frequency to cater to different application requirements.

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