IS61LPS102418A-200B3I

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • Low-power consumption
  • High-speed operation
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Model: IS61LPS102418A-200B3I
• Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
• Memory Type: SRAM (Static Random Access Memory)
• Organization: 1M x 18 bits
• Operating Voltage: 2.5V - 3.6V
• Speed: 200 MHz
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61LPS102418A-200B3I has a total of 119 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3-20 | A0-A17 | Address inputs | | 21 | WE | Write Enable | | 22 | OE | Output Enable | | 23-40 | DQ0-DQ17 | Data input/output | | 41-119 | NC | No connection |

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures efficient energy usage.
• Non-volatile memory retains stored data even when power is disconnected.
• Large storage capacity of 1M x 18 bits provides ample space for data storage.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Low-power consumption prolongs battery life in portable devices.
• Non-volatile memory ensures data integrity during power interruptions.
• Large storage capacity accommodates extensive data storage needs.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the nature of non-volatile memory.
• Sensitive to environmental conditions such as temperature and humidity.

Working Principles

The IS61LPS102418A-200B3I operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data, which can be accessed and modified at high speeds. The memory cells are organized in a 1M x 18 configuration, allowing for efficient storage and retrieval of data.

Detailed Application Field Plans

The IS61LPS102418A-200B3I is commonly used in various applications that require high-speed and low-power memory solutions. Some potential application fields include: - Embedded systems - Networking equipment - Telecommunications devices - Industrial automation - Automotive electronics

Detailed and Complete Alternative Models

• IS61LPS102418B-200B3I: Similar to IS61LPS102418A-200B3I, but with different package options.
• IS61LPS102418C-200B3I: Higher speed variant operating at 200 MHz.
• IS61LPS102418D-200B3I: Lower power consumption variant operating at 2.5V - 3.3V.

(Note: This list is not exhaustive and may vary based on specific requirements and availability in the market.)

This entry provides an overview of the IS61LPS102418A-200B3I memory device, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.