IS43R83200D-5TL-TR

Product Overview

Category

IS43R83200D-5TL-TR belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and data processing.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS43R83200D-5TL-TR is available in a small outline package (SOP) or thin small outline package (TSOP), which ensures easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and data processing capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS43R83200D-5TL-TR is typically packaged in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 32 Megabits (4 Megabytes)
• Organization: 4M x 8 bits
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 5 ns
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS43R83200D-5TL-TR is as follows:

1. VDD - Power Supply
2. DQ0-DQ7 - Data Input/Output
3. A0-A21 - Address Inputs
4. /CAS - Column Address Strobe
5. /RAS - Row Address Strobe
6. /WE - Write Enable
7. /CS - Chip Select
8. CLK - Clock Input
9. VSS - Ground

Functional Features

• Burst Mode Operation: Allows for high-speed consecutive data transfer.
• Auto Refresh: Automatically refreshes the memory cells to maintain data integrity.
• Power Down Mode: Reduces power consumption when the device is not in use.
• Self-Timed Write Cycle: Simplifies the write operation by eliminating the need for external timing control.

Advantages and Disadvantages

Advantages

• High-speed performance enhances overall system efficiency.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into space-constrained designs.
• Reliable operation ensures data integrity and system stability.

Disadvantages

• Limited memory capacity compared to other storage technologies.
• Sensitive to electrostatic discharge (ESD) and requires proper handling during installation.

Working Principles

IS43R83200D-5TL-TR operates based on synchronous dynamic random access memory (SDRAM) technology. It stores and retrieves data using a clock signal that synchronizes the input/output operations. The memory cells are organized in a matrix of rows and columns, allowing for efficient data access and manipulation.

Detailed Application Field Plans

IS43R83200D-5TL-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS43R83200D-5TL-TR include: - MT48LC4M32B2P-6A: 32 Megabit SDRAM, 4M x 8 bits, 3.3V, 6 ns access time. - K4S561632H-UC75: 32 Megabit SDRAM, 4M x 8 bits, 3.3V, 7.5 ns access time. - HYB39S256160FE-7: 32 Megabit SDRAM, 4M x 8 bits, 3.3V, 7 ns access time.

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements and availability.

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